J. Semicond. > 2009, Volume 30 > Issue 8 > 084003
|

SEMICONDUCTOR DEVICES

A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks

He Jin, Ma Chenyue, Zhang Lining, Zhang Jian and Zhang Xing

+ Author Affiliations
DOI: 10.1088/1674-4926/30/8/084003

PDF

Abstract: A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley–Read–Hall (SRH) statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap densityin terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trapdensity. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.

Key words: high-k gate stack

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3659 Times PDF downloads: 2250 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 13 March 2009 Online: Published: 01 August 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2009  >  30(8): 084003
      He Jin, Ma Chenyue, Zhang Lining, Zhang Jian, Zhang Xing. A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks[J]. Journal of Semiconductors, 2009, 30(8): 084003. doi: 10.1088/1674-4926/30/8/084003 ****He J, Ma C Y, Zhang L N, Zhang J, Zhang X. A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks[J]. J. Semicond., 2009, 30(8): 084003. doi:  10.1088/1674-4926/30/8/084003.
      Citation:
      He Jin, Ma Chenyue, Zhang Lining, Zhang Jian, Zhang Xing. A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks[J]. Journal of Semiconductors, 2009, 30(8): 084003. doi: 10.1088/1674-4926/30/8/084003 ****
      He J, Ma C Y, Zhang L N, Zhang J, Zhang X. A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks[J]. J. Semicond., 2009, 30(8): 084003. doi:  10.1088/1674-4926/30/8/084003.
      shu

      A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks

      DOI: 10.1088/1674-4926/30/8/084003

      • School of Computer & Information Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055, China

      • EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China

      • EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China

      • EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China

      • EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China

      • EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-02-12
      • Revised Date: 2009-03-13
      • Published Date: 2009-07-31

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return