A new double gate SOI LDMOS with a step doping profile in the drift region

Luo Xiaorong; Zhang Wei; Gu Jingjing; Liao Hong; Zhang Bo; Li Zhaoji

doi:10.1088/1674-4926/30/8/084006

Article Navigation > Journal of Semiconductors > 2009 > 30(8): 084006

Luo Xiaorong, Zhang Wei, Gu Jingjing, Liao Hong, Zhang Bo, Li Zhaoji. A new double gate SOI LDMOS with a step doping profile in the drift region[J]. Journal of Semiconductors, 2009, 30(8): 084006. doi: 10.1088/1674-4926/30/8/084006 ****Luo X R, Zhang W, Gu J J, Liao H, Zhang B, Li Z J. A new double gate SOI LDMOS with a step doping profile in the drift region[J]. J. Semicond., 2009, 30(8): 084006. doi: 10.1088/1674-4926/30/8/084006.

Citation:

Luo Xiaorong, Zhang Wei, Gu Jingjing, Liao Hong, Zhang Bo, Li Zhaoji. A new double gate SOI LDMOS with a step doping profile in the drift region[J]. Journal of Semiconductors, 2009, 30(8): 084006. doi: 10.1088/1674-4926/30/8/084006 ****

Luo X R, Zhang W, Gu J J, Liao H, Zhang B, Li Z J. A new double gate SOI LDMOS with a step doping profile in the drift region[J]. J. Semicond., 2009, 30(8): 084006. doi: 10.1088/1674-4926/30/8/084006.

Citation:

PDF( 857 KB)

A new double gate SOI LDMOS with a step doping profile in the drift region

DOI: 10.1088/1674-4926/30/8/084006

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
State Key Laboratory of ASIC & System, Fudan University, Shanghai 200433, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received Date: 2015-08-18
Accepted Date: 2009-02-23
Revised Date: 2009-03-25
Published Date: 2009-07-31

Abstract

Abstract

A new double gate SOI LDMOS with a step doping profile in the drift region is proposed. The structure is characterized by one surface gate and another embedded gate under the P-body region. The broadened current flow path and the majority carrier accumulation layer on the side wall of the embedded gate reduce the specificon-resistance (R_on,sp). The electric field distribution is improved due to the embedded gate and step doping profile, resulting in a high breakdown voltage (BV) and low R_on,sp. The influences of device parameters on BV and R_on,sp, spare investigated by simulation. The results indicate that BV is increased by 35.2% and R_on,sp is decreased by 35.1% compared to a conventional SOI LDMOS.
- SOI; embedded gate; electric field; breakdown voltage; specific on-resistance

FullText(HTML)

References(0)

References

A new double gate SOI LDMOS with a step doping profile in the drift region

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

A new double gate SOI LDMOS with a step doping profile in the drift region

DOI: 10.1088/1674-4926/30/8/084006

Abstract

References

Proportional views

Catalog

A new double gate SOI LDMOS with a step doping profile in the drift region

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

A new double gate SOI LDMOS with a step doping profile in the drift region

DOI: 10.1088/1674-4926/30/8/084006

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content