Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

Duan Huantao; Hao Yue; Zhang Jincheng

doi:10.1088/1674-4926/30/9/093001

Article Navigation > Journal of Semiconductors > 2009 > 30(9): 093001

Duan Huantao, Hao Yue, Zhang Jincheng. Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures[J]. Journal of Semiconductors, 2009, 30(9): 093001. doi: 10.1088/1674-4926/30/9/093001 ****Duan H T, Hao Y, Zhang J C. Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures[J]. J. Semicond., 2009, 30(9): 093001. doi: 10.1088/1674-4926/30/9/093001.

Citation:

Duan Huantao, Hao Yue, Zhang Jincheng. Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures[J]. Journal of Semiconductors, 2009, 30(9): 093001. doi: 10.1088/1674-4926/30/9/093001 ****

Duan H T, Hao Y, Zhang J C. Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures[J]. J. Semicond., 2009, 30(9): 093001. doi: 10.1088/1674-4926/30/9/093001.

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Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

DOI: 10.1088/1674-4926/30/9/093001

Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

Received Date: 2015-08-18
Accepted Date: 2009-02-18
Revised Date: 2009-04-15
Published Date: 2009-08-28

Abstract

Abstract

The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia (IASA) method on AlGaN/GaN heterostructures was studied. The use of AlN by the IASA method can effectively increase the crystalline quality and surface morphology of GaN. The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.
- metal-organic vaporphase epitaxy

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Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

DOI: 10.1088/1674-4926/30/9/093001

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Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

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Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

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