Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

Tian Mi; Xiu Xiangqian; Zhang Rong; Hua Xuemei; Liu Zhanhui; Han Ping; Xie Zili; Zheng Youdou

doi:10.1088/1674-4926/30/9/093004

Article Navigation > Journal of Semiconductors > 2009 > 30(9): 093004

Tian Mi, Xiu Xiangqian, Zhang Rong, Hua Xuemei, Liu Zhanhui, Han Ping, Xie Zili, Zheng Youdou. Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate[J]. Journal of Semiconductors, 2009, 30(9): 093004. doi: 10.1088/1674-4926/30/9/093004 ****Tian M, Xiu X Q, Zhang R, Hua X M, Liu Z H, Han P, Xie Z L, Zheng Y D. Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate[J]. J. Semicond., 2009, 30(9): 093004. doi: 10.1088/1674-4926/30/9/093004.

Citation:

Tian M, Xiu X Q, Zhang R, Hua X M, Liu Z H, Han P, Xie Z L, Zheng Y D. Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate[J]. J. Semicond., 2009, 30(9): 093004. doi: 10.1088/1674-4926/30/9/093004.

Citation:

PDF( 135 KB)

Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

DOI: 10.1088/1674-4926/30/9/093004

Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China

Received Date: 2015-08-18
Accepted Date: 2009-03-20
Revised Date: 2009-04-30
Published Date: 2009-08-28

Abstract

Abstract

A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy (HVPE) on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photoluminescence (PL) measurements were carried out. The results show that the electronic transition was influenced by the electric field along the c-axis, which results in an obvious anisotropy, but the influence was weakened by the hexagonal symmetry along the c-axis.
- γ-LiAlO2

FullText(HTML)

References(0)

References

Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

DOI: 10.1088/1674-4926/30/9/093004

Abstract

References

Proportional views

Catalog

Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

DOI: 10.1088/1674-4926/30/9/093004

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content