Lithography process for KrF in the sub-0.11 μm node

Zhao Yuhang; Zhu Jun; Tong Jiarong; Zeng Xuan

doi:10.1088/1674-4926/30/9/096004

J. Semicond. > 2009, Volume 30 > Issue 9 > 096004

SEMICONDUCTOR TECHNOLOGY

Lithography process for KrF in the sub-0.11 μm node

Zhao Yuhang, Zhu Jun, Tong Jiarong and Zeng Xuan

+ Author Affiliations

DOI: 10.1088/1674-4926/30/9/096004

Abstract: Currently, 200 mm wafer foundry companies are beginning to explore production feasibility under ground rules smaller than 0.11 μm while maintain the cost advantages of KrF exposure tool systems. The k1 factor under 0.11 μm at 248 nm illumination will be below 0.35, which means the process complexity is comparable with 65 nm at 193 nm illumination. In this paper, we present our initial study in the CD process window, mask error factor and CD through pitch performance at the 0.09 μm ground rule for three critical layers—gate poly, metal and contact. The wafer data in the process window and optical proximity will be analyzed. Based on the result, it is shown that the KrF tool is fully capable of sub 0.11 μm node mass production.

Key words: k1 factor

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Zhao Yuhang, Zhu Jun, Tong Jiarong, Zeng Xuan. Lithography process for KrF in the sub-0.11 μm node[J]. Journal of Semiconductors, 2009, 30(9): 096004. doi: 10.1088/1674-4926/30/9/096004

Zhao Y H, Zhu J, Tong J R, Zeng X. Lithography process for KrF in the sub-0.11 μm node[J]. J. Semicond., 2009, 30(9): 096004. doi: 10.1088/1674-4926/30/9/096004.

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Received: 18 August 2015 Revised: 04 May 2009 Online: Published: 01 September 2009

Currently, 200 mm wafer foundry companies are beginning to explore production feasibility under ground rules smaller than 0.11 μm while maintain the cost advantages of KrF exposure tool systems. The k1 factor under 0.11 μm at 248 nm illumination will be below 0.35, which means the process complexity is comparable with 65 nm at 193 nm illumination. In this paper, we present our initial study in the CD process window, mask error factor and CD through pitch performance at the 0.09 μm ground rule for three critical layers—gate poly, metal and contact. The wafer data in the process window and optical proximity will be analyzed. Based on the result, it is shown that the KrF tool is fully capable of sub 0.11 μm node mass production.

Lithography process for KrF in the sub-0.11 μm node

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