J. Semicond. > 2010, Volume 31 > Issue 1 > 012001

SEMICONDUCTOR PHYSICS

Calculation of band edge levels of strained Si/(111)Si1-xGex

Song Jianjun, Zhang Heming, Hu Huiyong, Dai Xianying and Xuan Rongxi

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DOI: 10.1088/1674-4926/31/1/012001

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Abstract: Calculations were performed on the band edge levels of (111)-biaxially strained Si on relaxed Si1-xGex alloy using the k·p perturbationmethod coupled with deformation potential theory. The results show that the conduction band (CB) edge is characterized by six identicalvalleys, that the valence band (VB) edge degeneracies are partially lifted, and that both the CB and VB edge levels move up in electron energy as the Ge fraction (x) increases. In addition, the dependence of the indirect bandgap and the VB edge splitting energy on x was obtained. Quantitative data from the results supply valuable references for Si-based strained device design.

Key words: strained Si

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    Received: 18 August 2015 Revised: 03 September 2009 Online: Published: 01 January 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(1): 012001
      Song Jianjun, Zhang Heming, Hu Huiyong, Dai Xianying, Xuan Rongxi. Calculation of band edge levels of strained Si/(111)Si1-xGex[J]. Journal of Semiconductors, 2010, 31(1): 012001. doi: 10.1088/1674-4926/31/1/012001 ****Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X. Calculation of band edge levels of strained Si/(111)Si1-xGex[J]. J. Semicond., 2010, 31(1): 012001. doi: 10.1088/1674-4926/31/1/012001.
      Citation:
      Song Jianjun, Zhang Heming, Hu Huiyong, Dai Xianying, Xuan Rongxi. Calculation of band edge levels of strained Si/(111)Si1-xGex[J]. Journal of Semiconductors, 2010, 31(1): 012001. doi: 10.1088/1674-4926/31/1/012001 ****
      Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X. Calculation of band edge levels of strained Si/(111)Si1-xGex[J]. J. Semicond., 2010, 31(1): 012001. doi: 10.1088/1674-4926/31/1/012001.
      shu

      Calculation of band edge levels of strained Si/(111)Si1-xGex

      DOI: 10.1088/1674-4926/31/1/012001

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-06-25
      • Revised Date: 2009-09-03
      • Published Date: 2009-12-29

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