| Citation: |
Hao Mingli, Shi Yin. A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS[J]. Journal of Semiconductors, 2010, 31(1): 015004. doi: 10.1088/1674-4926/31/1/015004
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Hao M L, Shi Y. A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS[J]. J. Semicond., 2010, 31(1): 015004. doi: 10.1088/1674-4926/31/1/015004.
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Abstract
This paper presents a 2.4 GHz power amplifier (PA) designed and implemented in 0.35 m SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB, improving the stability and the gain of the circuit. In addition, a low-pass network for output matching is designed to improve the linearity and power capability. At 2.4 GHz, a P1dB of 15.7 dBm has been measured, and the small signal gain is 27.6 dB with S11 < -7 dB, and S22 < -15 dB.-
Keywords:
- 2.4 GHz,
- PA,
- SiGe BiCMOS,
- parasitics
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References
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Proportional views
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