Abstract: A high precision high-order curvature-compensated bandgap reference compatible with the standard CMOS process, which uses a compensation proportional to VTlnT realized by utilizing voltage to current converters and the voltage current characteristics of a base–emitter junction, is presented. Experiment results of the proposed bandgap reference implemented with the CSMC 0.5-μm CMOS process demonstrate that a temperature coefficient of 3.9 ppm/℃ is realized at 3.6 V power supply, a power supply rejection ratio of 72 dB is achieved, and the line regulation is better than 0.304 mV/V dissipating a maximum supply current of 42 μA.

Key words: high-order curvature compensation,  CMOS bandgap reference,  temperature coefficient,  PSRR