High temperature characterization of double base epilayer 4H-SiC BJTs

Zhang Qian; Zhang Yuming; Zhang Yimen; Wang Yuehu

doi:10.1088/1674-4926/31/11/114005

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Zhang Qian, Zhang Yuming, Zhang Yimen, Wang Yuehu. High temperature characterization of double base epilayer 4H-SiC BJTs[J]. Journal of Semiconductors, 2010, 31(11): 114005. doi: 10.1088/1674-4926/31/11/114005 ****Zhang Q, Zhang Y M, Zhang Y M, Wang Y H. High temperature characterization of double base epilayer 4H-SiC BJTs[J]. J. Semicond., 2010, 31(11): 114005. doi: 10.1088/1674-4926/31/11/114005.

Citation:

Zhang Qian, Zhang Yuming, Zhang Yimen, Wang Yuehu. High temperature characterization of double base epilayer 4H-SiC BJTs[J]. Journal of Semiconductors, 2010, 31(11): 114005. doi: 10.1088/1674-4926/31/11/114005 ****

Zhang Q, Zhang Y M, Zhang Y M, Wang Y H. High temperature characterization of double base epilayer 4H-SiC BJTs[J]. J. Semicond., 2010, 31(11): 114005. doi: 10.1088/1674-4926/31/11/114005.

Citation:

Zhang Q, Zhang Y M, Zhang Y M, Wang Y H. High temperature characterization of double base epilayer 4H-SiC BJTs[J]. J. Semicond., 2010, 31(11): 114005. doi: 10.1088/1674-4926/31/11/114005.

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High temperature characterization of double base epilayer 4H-SiC BJTs

DOI: 10.1088/1674-4926/31/11/114005

Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received Date: 2015-08-18
Accepted Date: 2010-05-24
Revised Date: 2010-06-29
Published Date: 2010-10-31

Abstract

Abstract

Based on the material characteristics and the operational principle of the double base epilayer BJTs, and according to the drift–diffusion and the carrier recombination theory, the common emitter current gain is calculated considering four recombination processes. Then its performance is analyzed under high temperature conditions. The results show that the emitter injection efficiency decreases due to an increase in the base ionization rate with increasing temperature. Meanwhile, the SiC/SiO₂ interface states and the quality of the passivation layer will affect the surface recombination velocity, and make an obvious current gain fall-off at a high collector current.
- 4H-SiC, Bipolar Junction Transistors(BJTs), current gain, carrier recombination, high temperature

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High temperature characterization of double base epilayer 4H-SiC BJTs

DOI: 10.1088/1674-4926/31/11/114005

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High temperature characterization of double base epilayer 4H-SiC BJTs

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