| Citation: |
Jia Ze, Zou Zhongren, Ren Tianling, Chen Hongyi. An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin[J]. Journal of Semiconductors, 2010, 31(11): 115001. doi: 10.1088/1674-4926/31/11/115001
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Jia Z, Zou Z R, Ren T L, Chen H Y. An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin[J]. J. Semicond., 2010, 31(11): 115001. doi: 10.1088/1674-4926/31/11/115001.
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An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin
DOI: 10.1088/1674-4926/31/11/115001
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Abstract
A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed, in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier. Compared with the conventional symmetrical scheme in Ref. [8], the proposed scheme increases the sense margin of the readout current by 53.9% and decreases the sensing power consumption by 14.1%, at the cost of an additional 7.89% area of the sensing scheme. An experimental FRAM prototype utilizing the proposed asymmetrical scheme is implemented in a 0.35 μm three metal process, in which the function of the prototype is verified.-
Keywords:
- FRAM,
- sense margin,
- current-based sense amplifier,
- asymmetrical
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References
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Proportional views
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