Insulated gate bipolar transistor with trench gate structure of accumulation channel

Qian Mengliang; Li Zehong; Zhang Bo; Li Zhaoji

doi:10.1088/1674-4926/31/3/034002

Article Navigation > Journal of Semiconductors > 2010 > 31(3): 034002

Qian Mengliang, Li Zehong, Zhang Bo, Li Zhaoji. Insulated gate bipolar transistor with trench gate structure of accumulation channel[J]. Journal of Semiconductors, 2010, 31(3): 034002. doi: 10.1088/1674-4926/31/3/034002 ****Qian M L, Li Z H, Zhang B, Li Z J. Insulated gate bipolar transistor with trench gate structure of accumulation channel[J]. J. Semicond., 2010, 31(3): 034002. doi: 10.1088/1674-4926/31/3/034002.

Citation:

Qian Mengliang, Li Zehong, Zhang Bo, Li Zhaoji. Insulated gate bipolar transistor with trench gate structure of accumulation channel[J]. Journal of Semiconductors, 2010, 31(3): 034002. doi: 10.1088/1674-4926/31/3/034002 ****

Qian M L, Li Z H, Zhang B, Li Z J. Insulated gate bipolar transistor with trench gate structure of accumulation channel[J]. J. Semicond., 2010, 31(3): 034002. doi: 10.1088/1674-4926/31/3/034002.

Citation:

Qian M L, Li Z H, Zhang B, Li Z J. Insulated gate bipolar transistor with trench gate structure of accumulation channel[J]. J. Semicond., 2010, 31(3): 034002. doi: 10.1088/1674-4926/31/3/034002.

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Insulated gate bipolar transistor with trench gate structure of accumulation channel

DOI: 10.1088/1674-4926/31/3/034002

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China

Received Date: 2015-08-18
Accepted Date: 2009-08-02
Revised Date: 2009-10-15
Published Date: 2010-02-08

Abstract

Abstract

An accumulation channel trench gate insulated gate bipolar transistor (ACT-IGBT) is proposed. The simulation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT (CT-IGBT) are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.
- ACT-IGBT

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Insulated gate bipolar transistor with trench gate structure of accumulation channel

DOI: 10.1088/1674-4926/31/3/034002

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