P-type ZnO thin films prepared by in situ oxidation of DC sputtered Zn3N2:Ga

Zhang Jun; Xue Shuwen; Shao Lexi

doi:10.1088/1674-4926/31/4/043001

J. Semicond. > 2010, Volume 31 > Issue 4 > 043001

SEMICONDUCTOR MATERIALS

P-type ZnO thin films prepared by in situ oxidation of DC sputtered Zn3N2:Ga

Zhang Jun, Xue Shuwen and Shao Lexi

+ Author Affiliations

DOI: 10.1088/1674-4926/31/4/043001

Abstract: The feasibility of a new fabrication route for N and Ga codoped p-type ZnO thin films on glass substrates, consisting of DC sputtering deposition of Zn3N2:Ga precursors followed by in situ oxidation in high purity oxygen, has been studied. The effects of oxidation temperature on the structural, optical and electrical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance and Hall effect measurements. The results were compared to a control film without Ga. XRD analyses revealed that the Zn3N2 films entirely transformed into ZnO films after annealing Zn3N2 films in oxygen over 500 ℃ for 2 h. Hall effect measurements confirmed p-type conduction in N and Ga codoped ZnO films with a low resistivity of 19.8 Ω?cm, a high hole concentration of 4.6E18 cm3 and a Hall mobility of 0.7 cm2/(V s). These results demonstrate a promising approach to fabricate low resistivity p-type ZnO with high hole concentration.

Key words: p-type, ZnO films, Zn3N2 films, codoping, magnetron sputtering

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Zhang Jun, Xue Shuwen, Shao Lexi. P-type ZnO thin films prepared by in situ oxidation of DC sputtered Zn3N2:Ga[J]. Journal of Semiconductors, 2010, 31(4): 043001. doi: 10.1088/1674-4926/31/4/043001

Zhang J, Xue S W, Shao L X. P-type ZnO thin films prepared by in situ oxidation of DC sputtered Zn3N2:Ga[J]. J. Semicond., 2010, 31(4): 043001. doi: 10.1088/1674-4926/31/4/043001.

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Received: 18 August 2015 Revised: Online: Published: 01 April 2010

The feasibility of a new fabrication route for N and Ga codoped p-type ZnO thin films on glass substrates, consisting of DC sputtering deposition of Zn3N2:Ga precursors followed by in situ oxidation in high purity oxygen, has been studied. The effects of oxidation temperature on the structural, optical and electrical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance and Hall effect measurements. The results were compared to a control film without Ga. XRD analyses revealed that the Zn3N2 films entirely transformed into ZnO films after annealing Zn3N2 films in oxygen over 500 ℃ for 2 h. Hall effect measurements confirmed p-type conduction in N and Ga codoped ZnO films with a low resistivity of 19.8 Ω?cm, a high hole concentration of 4.6E18 cm3 and a Hall mobility of 0.7 cm2/(V s). These results demonstrate a promising approach to fabricate low resistivity p-type ZnO with high hole concentration.

P-type ZnO thin films prepared by in situ oxidation of DC sputtered Zn3N2:Ga

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