Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

Zhang Yong; Yang Jianhong; Cai Xueyuan; Wang Zaixing

doi:10.1088/1674-4926/31/4/044002

J. Semicond. > 2010, Volume 31 > Issue 4 > 044002

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Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

Zhang Yong, Yang Jianhong, Cai Xueyuan and Wang Zaixing

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DOI: 10.1088/1674-4926/31/4/044002

Abstract: The exponential dependence of the potential barrier height f_c on the biased voltages of the inorganic/organic static induction transistor (SIT/OSIT) through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of f_c on the applied biases can be used to derive the I–V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description of f_c can contribute effectively to reduce the error between the theoretical and experimental results of the I–V characteristics.

Key words: SIT, OSIT, potential barrier height, normalized approach, I –V characteristics

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Zhang Yong, Yang Jianhong, Cai Xueyuan, Wang Zaixing. Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor[J]. Journal of Semiconductors, 2010, 31(4): 044002. doi: 10.1088/1674-4926/31/4/044002

Zhang Y, Yang J H, Cai X Y, Wang Z X. Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor[J]. J. Semicond., 2010, 31(4): 044002. doi: 10.1088/1674-4926/31/4/044002.

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Received: 18 August 2015 Revised: 29 October 2009 Online: Published: 01 April 2010

The exponential dependence of the potential barrier height f_c on the biased voltages of the inorganic/organic static induction transistor (SIT/OSIT) through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of f_c on the applied biases can be used to derive the I–V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description of f_c can contribute effectively to reduce the error between the theoretical and experimental results of the I–V characteristics.

Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

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Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

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Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

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