SEMICONDUCTOR DEVICES
Zhao Lixin, Jin Zhi and Liu Xinyu
Abstract: The microwave dynamic load line characteristics of an advanced InGaP HBT are investigated experimentally and analyzed at small signal level and at large signal level for microwave power amplification. Investigation results show that the dynamic load curves are not always like an elliptic curve, and the current extreme points do not locate at voltage extreme points. The dynamic load curve current extreme point lines sit at the small signal load line up to the P-3dB point, and the lines show a constant slope from a small signal up to the saturation power point. A method to calculate the realistically delivered power to load is presented which fits the test result well.
Key words: microwave dynamic large signal characteristics, InGaP HBT, microwave power
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Received: 18 August 2015 Revised: 23 November 2009 Online: Published: 01 April 2010
| Citation: |
Zhao Lixin, Jin Zhi, Liu Xinyu. The microwave large signal load line of an InGaP HBT[J]. Journal of Semiconductors, 2010, 31(4): 044004. doi: 10.1088/1674-4926/31/4/044004
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Zhao L X, Jin Z, Liu X Y. The microwave large signal load line of an InGaP HBT[J]. J. Semicond., 2010, 31(4): 044004. doi: 10.1088/1674-4926/31/4/044004.
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