Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering

Wang Guanghua; Kong Jincheng; Li Xiongjun; Qiu Feng; Li Cong; Yang Lili; Kong Lingde; Ji Rongbin

doi:10.1088/1674-4926/31/5/053004

J. Semicond. > 2010, Volume 31 > Issue 5 > 053004

SEMICONDUCTOR MATERIALS

Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering

Wang Guanghua, Kong Jincheng, Li Xiongjun, Qiu Feng, Li Cong, Yang Lili, Kong Lingde and Ji Rongbin

+ Author Affiliations

DOI: 10.1088/1674-4926/31/5/053004

Abstract: Mercury cadmium telluride films were grown by the RF magnetron sputtering technique at different sputtering powers. In experiment, X-ray diffraction (XRD) and atomic forcemicroscopy (AFM) have been used to characterize the microstructure of HgCdTe films. The experimental results showed that when the growth power increased, the growth rate of HgCdTe films increased; when the growth power was less than 30 W, the HgCdTe film deposited by RF magnetron sputtering was amorphous; when the growth power was more than 30 W, the films exhibited polycrystalline structure. Films deposited at different growth rates were found to have characteristically different formations and surface morphologies; as observed through AFM, the surface morphology is composed of longitudinal islands forming a maze-like pattern in the high deposition rate. AFM analysis also illustrated that a significant reduction in the areal density of large islands and characteristically smoother films was achieved using a low deposition rate.

Key words: HgCdTe films, semiconductors, growth rate, microstructure, surface morphology

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Wang Guanghua, Kong Jincheng, Li Xiongjun, Qiu Feng, Li Cong, Yang Lili, Kong Lingde, Ji Rongbin. Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering[J]. Journal of Semiconductors, 2010, 31(5): 053004. doi: 10.1088/1674-4926/31/5/053004

Wang G H, Kong J C, Li X J, Qiu F, Li C, Yang L L, Kong L D, Ji R B. Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering[J]. J. Semicond., 2010, 31(5): 053004. doi: 10.1088/1674-4926/31/5/053004.

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Received: 18 August 2015 Revised: 17 December 2009 Online: Published: 01 May 2010

Mercury cadmium telluride films were grown by the RF magnetron sputtering technique at different sputtering powers. In experiment, X-ray diffraction (XRD) and atomic forcemicroscopy (AFM) have been used to characterize the microstructure of HgCdTe films. The experimental results showed that when the growth power increased, the growth rate of HgCdTe films increased; when the growth power was less than 30 W, the HgCdTe film deposited by RF magnetron sputtering was amorphous; when the growth power was more than 30 W, the films exhibited polycrystalline structure. Films deposited at different growth rates were found to have characteristically different formations and surface morphologies; as observed through AFM, the surface morphology is composed of longitudinal islands forming a maze-like pattern in the high deposition rate. AFM analysis also illustrated that a significant reduction in the areal density of large islands and characteristically smoother films was achieved using a low deposition rate.

Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering

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