Citation: |
Zou Huanhuan, Sun Lingling, Wen Jincai, Liu Jun. Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies[J]. Journal of Semiconductors, 2010, 31(5): 055011. doi: 10.1088/1674-4926/31/5/055011
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Zou H H, Sun L L, Wen J C, Liu J. Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies[J]. J. Semicond., 2010, 31(5): 055011. doi: 10.1088/1674-4926/31/5/055011.
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Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies
DOI: 10.1088/1674-4926/31/5/055011
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Abstract
Two different scalable models developed based on enhanced 1-π and 2-π topologies are presented for on-chip spiral inductor modeling. All elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable modeling. Then a comparison between the 1-π and 2-π scalable models is made from the following aspects: the complexity of equivalent circuit models and parameter-extraction procedures, scalable rules and the accuracy of scalable models. The two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency (SRF) for a set of spiral inductors with different L, R and N, which are fabricated by employing 0.18-μm 1P6M RF CMOS technology.-
Keywords:
- RF-CMOS,
- on-chip spiral inductor,
- scalable model,
- 1-π,
- 2-π
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References
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