J. Semicond. > 2010, Volume 31 > Issue 7 > 071001

INVITED PAPERS

The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)

Jie Binbin and Sah Chihtang

+ Author Affiliations
DOI: 10.1088/1674-4926/31/7/071001

PDF

Abstract: This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors (BiFETs) with a pure base and two MOS gates operating in the unipolar (electron) current mode. These nMOS-BiFETs, known as nMOS-FinFETs, usually have electrically short channels compared with their intrinsic Debye length of about 25 μm at room temperatures. These longitudinal electric current terms are important short-channel current components, which have been neglected in the computation of the long-channel electrical characteristics. This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm.

Key words: bipolar field-effect transistorpure baseintrinsic Debye lengthlong-channel characteristicsshort-channel correction

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4044 Times PDF downloads: 1517 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 20 May 2010 Online: Published: 01 July 2010

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Jie Binbin, Sah Chihtang. The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)[J]. Journal of Semiconductors, 2010, 31(7): 071001. doi: 10.1088/1674-4926/31/7/071001 ****Jie B B, Sah C T. The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)[J]. J. Semicond., 2010, 31(7): 071001. doi:  10.1088/1674-4926/31/7/071001.
      Citation:
      Jie Binbin, Sah Chihtang. The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)[J]. Journal of Semiconductors, 2010, 31(7): 071001. doi: 10.1088/1674-4926/31/7/071001 ****
      Jie B B, Sah C T. The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)[J]. J. Semicond., 2010, 31(7): 071001. doi:  10.1088/1674-4926/31/7/071001.

      The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)

      DOI: 10.1088/1674-4926/31/7/071001
      • Received Date: 2015-08-18
      • Accepted Date: 2010-05-12
      • Revised Date: 2010-05-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return