The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)

Jie Binbin; Sah Chihtang

doi:10.1088/1674-4926/31/7/071001

J. Semicond. > 2010, Volume 31 > Issue 7 > 071001

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The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)

Jie Binbin and Sah Chihtang

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DOI: 10.1088/1674-4926/31/7/071001

Abstract: This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors (BiFETs) with a pure base and two MOS gates operating in the unipolar (electron) current mode. These nMOS-BiFETs, known as nMOS-FinFETs, usually have electrically short channels compared with their intrinsic Debye length of about 25 μm at room temperatures. These longitudinal electric current terms are important short-channel current components, which have been neglected in the computation of the long-channel electrical characteristics. This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm.

Key words: bipolar field-effect transistor, pure base, intrinsic Debye length, long-channel characteristics, short-channel correction

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Jie Binbin, Sah Chihtang. The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)[J]. Journal of Semiconductors, 2010, 31(7): 071001. doi: 10.1088/1674-4926/31/7/071001

Jie B B, Sah C T. The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)[J]. J. Semicond., 2010, 31(7): 071001. doi: 10.1088/1674-4926/31/7/071001.

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Received: 18 August 2015 Revised: 20 May 2010 Online: Published: 01 July 2010

This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors (BiFETs) with a pure base and two MOS gates operating in the unipolar (electron) current mode. These nMOS-BiFETs, known as nMOS-FinFETs, usually have electrically short channels compared with their intrinsic Debye length of about 25 μm at room temperatures. These longitudinal electric current terms are important short-channel current components, which have been neglected in the computation of the long-channel electrical characteristics. This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm.

The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)

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