| Citation: |
Chen Jianjun, Chen Shuming, Liang Bin, Liu Biwei, Liu Zheng, Teng Zheqian. Hot carrier effects of SOI NMOS[J]. Journal of Semiconductors, 2010, 31(7): 074006. doi: 10.1088/1674-4926/31/7/074006
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Chen J J, Chen S M, Liang B, Liu B W, Liu Z, Teng Z Q. Hot carrier effects of SOI NMOS[J]. J. Semicond., 2010, 31(7): 074006. doi: 10.1088/1674-4926/31/7/074006.
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Abstract
Hot carrier effect (HCE) is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS. Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation, a HCE degradation model for annular NMOS and two-edged NMOS is proposed. According to this model, we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate, and annular NMOS has more serious HCE degradation than two-edged NMOS. The design, fabrication and HCE experiments of these NMOS in a 0.5-μm PD SOI process verify the correctness of the conclusion. -
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