SEMICONDUCTOR DEVICES
Abstract: An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented. This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel. Experimental results show the measured pinch-off voltage is consistent with theoretical prediction. This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor.
Key words: pinch-off voltage
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Received: 18 August 2015 Revised: 25 March 2010 Online: Published: 01 July 2010
| Citation: |
Li Binqiao, Yu Junting, Xu Jiangtao, Yu Pingping. An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor[J]. Journal of Semiconductors, 2010, 31(7): 074010. doi: 10.1088/1674-4926/31/7/074010
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Li B Q, Yu J T, Xu J T, Yu P P. An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor[J]. J. Semicond., 2010, 31(7): 074010. doi: 10.1088/1674-4926/31/7/074010.
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