Theoretical study of the SiO<sub><b>2</b></sub>/Si interface and its effect on energy band profile and MOSFET gate tunneling current

Zhu Huiwen; Liu Yongsong; Mao Lingfeng; Shen Jingqin; Zhu Zhiyan; Tang Weihua

doi:10.1088/1674-4926/31/8/082003

J. Semicond. > 2010, Volume 31 > Issue 8 > 082003

SEMICONDUCTOR PHYSICS

Theoretical study of the SiO₂/Si interface and its effect on energy band profile and MOSFET gate tunneling current

Zhu Huiwen, Liu Yongsong, Mao Lingfeng, Shen Jingqin, Zhu Zhiyan and Tang Weihua

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DOI: 10.1088/1674-4926/31/8/082003

Abstract: Two SiO₂/Si interface structures, which are described by the double bonded model (DBM) and the bridge oxygen model (BOM), have been theoretically studied via first-principle calculations. First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM. Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO₂/Si interface structure described by DBM leads to a larger gate leakage current.

Key words: interface

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Zhu Huiwen, Liu Yongsong, Mao Lingfeng, Shen Jingqin, Zhu Zhiyan, Tang Weihua. Theoretical study of the SiO₂/Si interface and its effect on energy band profile and MOSFET gate tunneling current[J]. Journal of Semiconductors, 2010, 31(8): 082003. doi: 10.1088/1674-4926/31/8/082003

Zhu H W, Liu Y S, Mao L F, Shen J Q, Zhu Z Y, Tang W H. Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current[J]. J. Semicond., 2010, 31(8): 082003. doi: 10.1088/1674-4926/31/8/082003.

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Received: 18 August 2015 Revised: 29 March 2010 Online: Published: 01 August 2010

Two SiO₂/Si interface structures, which are described by the double bonded model (DBM) and the bridge oxygen model (BOM), have been theoretically studied via first-principle calculations. First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM. Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO₂/Si interface structure described by DBM leads to a larger gate leakage current.

Theoretical study of the SiO₂/Si interface and its effect on energy band profile and MOSFET gate tunneling current

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Theoretical study of the SiO₂/Si interface and its effect on energy band profile and MOSFET gate tunneling current

Theoretical study of the SiO₂/Si interface and its effect on energy band profile and MOSFET gate tunneling current