A Ga-doped ZnO transparent conduct layer for GaN-based LEDs

Liu Zhen; Wang Xiaofeng; Yang Hua; Duan Yao; Zeng Yiping

doi:10.1088/1674-4926/31/9/094002

J. Semicond. > 2010, Volume 31 > Issue 9 > 094002

SEMICONDUCTOR DEVICES

A Ga-doped ZnO transparent conduct layer for GaN-based LEDs

Liu Zhen, Wang Xiaofeng, Yang Hua, Duan Yao and Zeng Yiping

+ Author Affiliations

DOI: 10.1088/1674-4926/31/9/094002

Abstract: An 8 μm thick Ga-doped ZnO (GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode (LED) to substitute for the conventional ITO as a transparent conduct layer (TCL). Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6% as compared to an LED with an ITO TCL at 20 mA. In addition, the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED. To investigate the reason for the increase of the forward voltage, X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction. The large valence band offset (2.24 ± 0.21 eV) resulting from the formation of Ga₂O₃ in the GZO/p-GaN interface was attributed to the increase of the forward voltage.

Key words: Ga-doped ZnO film, light-emitting diode, electroluminescence spectra, X-ray photoelectron spectroscopy

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Received: 18 August 2015 Revised: Online: Published: 01 September 2010

An 8 μm thick Ga-doped ZnO (GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode (LED) to substitute for the conventional ITO as a transparent conduct layer (TCL). Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6% as compared to an LED with an ITO TCL at 20 mA. In addition, the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED. To investigate the reason for the increase of the forward voltage, X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction. The large valence band offset (2.24 ± 0.21 eV) resulting from the formation of Ga₂O₃ in the GZO/p-GaN interface was attributed to the increase of the forward voltage.

A Ga-doped ZnO transparent conduct layer for GaN-based LEDs

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