Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor

Teng Xiaoming; Liang Chao; He Jinhua

doi:10.1088/1674-4926/32/1/012003

J. Semicond. > 2011, Volume 32 > Issue 1 > 012003

SEMICONDUCTOR PHYSICS

Effect of strontium nitride on the properties of Sr₂Si₅N₈:Eu²⁺ red phosphor

Teng Xiaoming, Liang Chao and He Jinhua

+ Author Affiliations

DOI: 10.1088/1674-4926/32/1/012003

Abstract: The nitride phosphor Sr₂Si₅N₈:Eu²⁺ was synthesized by the high temperature solid-state method. The properties of Sr₂Si₅N₈:Eu²⁺ were discussed by X-ray diffraction (XRD) scanning electron microscope (SEM) and spectra analysis. The XRD pattern shows that the single phase produces when strontium nitride is a bit excessive. The SEM photo implies that the excessive strontium nitride works as a flux in the reaction system. The position of emission peak is also located at about 612 nm as strontium nitride is excessive. The luminescent intensity of the phosphor adding excessive strontium nitride is higher than that of the phosphor introducing stoichiometric strontium nitride. The optimized content of nitride strontium was 2.05 mol/mol for the obtained phosphor with excellent properties.

Key words: luminescence, strontium nitride, alkaline earth, white LEDs, rare earth

1	Reactive facet of carbon nitride single crystals Kong Liu Journal of Semiconductors, 2020, 41(9): 090202. doi: 10.1088/1674-4926/41/9/090202
2	Hydride vapor phase epitaxy for gallium nitride substrate Jun Hu, Hongyuan Wei, Shaoyan Yang, Chengming Li, Huijie Li, et al. Journal of Semiconductors, 2019, 40(10): 101801. doi: 10.1088/1674-4926/40/10/101801
3	Photoluminescence and structural analysis of wurtzite (ZnO)_1−x(V₂O₅)_x composite Amjid Iqbal, Arshad Mahmood, Q. Raza, A. Shah, Rashad Rashid, et al. Journal of Semiconductors, 2018, 39(8): 082002. doi: 10.1088/1674-4926/39/8/082002
4	Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures G. Nagaraju, K. Ravindranatha Reddy, V. Rajagopal Reddy Journal of Semiconductors, 2017, 38(11): 114001. doi: 10.1088/1674-4926/38/11/114001
5	Advances and prospects in visible light communications Hongda Chen, Chunhui Wu, Honglei Li, Xiongbin Chen, Zongyu Gao, et al. Journal of Semiconductors, 2016, 37(1): 011001. doi: 10.1088/1674-4926/37/1/011001
6	Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method Jing Wen, Yumei Wen, Ping Li, Sanshan Wang Journal of Semiconductors, 2016, 37(6): 064010. doi: 10.1088/1674-4926/37/6/064010
7	Synthesis and electroluminescence characterization of a new aluminum complex,[8-hydroxyquinoline] bis[2, 2'bipyridine] aluminum Al(Bpy)₂q Rahul Kumar, Ritu Srivastava, Punita Singh Journal of Semiconductors, 2016, 37(1): 013001. doi: 10.1088/1674-4926/37/1/013001
8	Synthesis and electroluminescence properties of tris-[5-choloro-8-hydroxyquinoline] aluminum Al(5-Clq)₃ Rahul Kumar, Parag Bhargava, Ritu Srivastava, Priyanka Tyagi Journal of Semiconductors, 2015, 36(6): 064001. doi: 10.1088/1674-4926/36/6/064001
9	Preparation of rare-earth element doped Mg₂Si by FAPAS Wang Liqi, Meng Qingsen, Fan Wenhao Journal of Semiconductors, 2012, 33(11): 113004. doi: 10.1088/1674-4926/33/11/113004
10	Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening Liu Zike, Gao Wei, Xu Chen, Zou Desu, Qin Yuan, et al. Journal of Semiconductors, 2010, 31(11): 114011. doi: 10.1088/1674-4926/31/11/114011
11	Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode Ye Zhizhen, Zhang Liqiang, Huang Jingyun, Zhang Yinzhu, Zhu Liping, et al. Journal of Semiconductors, 2009, 30(8): 081001. doi: 10.1088/1674-4926/30/8/081001
12	Visible photoluminescence of porous silicon covered with an HfON dielectric layer Jiang Ran, Zhang Yan Journal of Semiconductors, 2009, 30(8): 082003. doi: 10.1088/1674-4926/30/8/082003
13	Luminescence spectroscopy of ion implanted AlN bulk single crystal Li Weiwei, Zhao Youwen, Dong Zhiyuan, Yang Jun, Hu Weijie, et al. Journal of Semiconductors, 2009, 30(8): 083002. doi: 10.1088/1674-4926/30/8/083002
14	Improving the Luminescence Efficiency of Power White LEDs with Slurry Li Junfei, Rao Haibo, Hou Bin, Hu Yue, Shen Fahua, et al. Journal of Semiconductors, 2008, 29(5): 984-987.
15	Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices Li Hongjian, Yan Lingling, Huang Baiyun, Yi Danqing, Hu Jin, et al. Chinese Journal of Semiconductors , 2006, 27(1): 30-34.
16	Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, et al. Chinese Journal of Semiconductors , 2006, 27(3): 397-402.
17	Nonlinear Current-Voltage Characteristics and Electroluminescence of cBN Crystal Dou Qingping, Chen Zhanguo, Jia Gang, Ma Haitao, Cao Kun, et al. Chinese Journal of Semiconductors , 2006, 27(4): 609-612.
18	Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure Fu Zhuxi, Sun Xiankai, Zhu Junjie, Lin Bixia Chinese Journal of Semiconductors , 2006, 27(2): 239-244.
19	A High Performance Sub-100nm Nitride/Oxynitride Stack Gate Dielectric CMOS Device with Refractory W/TiN Metal Gates Zhong Xinghua, Zhou Huajie, Lin Gang, Xu Qiuxia Chinese Journal of Semiconductors , 2006, 27(3): 448-453.
20	Measurements of Carrier Confinement at β-FeSi₂-Si Heterojunction by Electroluminescence Li Cheng, T. Suemas, F. Hasegawa Chinese Journal of Semiconductors , 2005, 26(2): 230-233.

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 4607 Times PDF downloads: 2895 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: Online: Published: 01 January 2011

The nitride phosphor Sr₂Si₅N₈:Eu²⁺ was synthesized by the high temperature solid-state method. The properties of Sr₂Si₅N₈:Eu²⁺ were discussed by X-ray diffraction (XRD) scanning electron microscope (SEM) and spectra analysis. The XRD pattern shows that the single phase produces when strontium nitride is a bit excessive. The SEM photo implies that the excessive strontium nitride works as a flux in the reaction system. The position of emission peak is also located at about 612 nm as strontium nitride is excessive. The luminescent intensity of the phosphor adding excessive strontium nitride is higher than that of the phosphor introducing stoichiometric strontium nitride. The optimized content of nitride strontium was 2.05 mol/mol for the obtained phosphor with excellent properties.

Effect of strontium nitride on the properties of Sr₂Si₅N₈:Eu²⁺ red phosphor

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Effect of strontium nitride on the properties of Sr₂Si₅N₈:Eu²⁺ red phosphor

DOI: 10.1088/1674-4926/32/1/012003

Abstract

References

Proportional views

Catalog

Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor

DOI: 10.1088/1674-4926/32/1/012003

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content

Effect of strontium nitride on the properties of Sr₂Si₅N₈:Eu²⁺ red phosphor

Effect of strontium nitride on the properties of Sr₂Si₅N₈:Eu²⁺ red phosphor