SEMICONDUCTOR INTEGRATED CIRCUITS
Abstract: Au/cellulose-PEPC/Au surface-type humidity sensors were fabricated by drop-casting cellulose and poly-N-epoxypropylcarbazole (PEPC) blend thin films. A blend of 2wt% of each cellulose and PEPC in benzol was used for the deposition of humidity sensing films. Blend films were deposited on glass substrates with preliminary deposited surface-type gold electrodes. Films of different thicknesses of cellulose and PEPC composite were deposited by drop-casting technique. A change in electrical resistance and capacitance of the fabricated devices was observed by increasing the relative humidity in the range of 0–95% RH. It was observed that the capacitances of the sensors increase, while their resistances decrease with increasing the relative humidity. The sensors were connected to op-amp square wave oscillators. It was observed that with increasing the relative humidity, the oscillator's frequencies were also increased in the range of 4.2–12.0 kHz for 65 μm thick film sample, 4.1–9.0 kHz for 88 μm thick film sample, and 4.2–9.0 kHz for 210 μm sample. Effects of film thickness on the oscillator's frequency with respect to humidity were also investigated. This polymer humidity sensor controlled oscillator can be used for short-range and long-range remote systems at environmental monitoring and assessment of the humidity level.
Key words: surface-type sensor
| 1 |
Effect of ZnO films on CdTe solar cells Liu Tingliang, He Xulin, Zhang Jingquan, Feng Lianghuan, Wu Lili, et al. Journal of Semiconductors, 2012, 33(9): 093003. doi: 10.1088/1674-4926/33/9/093003 |
| 2 |
Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors Qiao Hui, Hu Weida, Ye Zhenhua, Li Xiangyang, Gong Haimei, et al. Journal of Semiconductors, 2010, 31(3): 036003. doi: 10.1088/1674-4926/31/3/036003 |
| 3 |
Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors Zhu Xiaming, Wu Huizhen, Wang Shuangjiang, Zhang Yingying, Cai Chunfeng, et al. Journal of Semiconductors, 2009, 30(3): 033001. doi: 10.1088/1674-4926/30/3/033001 |
| 4 |
Bulk Single Crystal Growth and Properties of In-Doped ZnO Zhang Fan, Zhao Youwen, Dong Zhiyuan, Zhang Rui, Yang Jun, et al. Journal of Semiconductors, 2008, 29(8): 1540-1543. |
| 5 |
Influence of Be-Doping on Electronic Structure and Optical Properties of ZnO Zheng Yongping, Chen Zhigao, Lu Yu, Wu Qingyun, Weng Zhenzhen, et al. Journal of Semiconductors, 2008, 29(12): 2316-2321. |
| 6 |
Influence of the Annealing Temperature on the Structural and Optical Properties of N-Doped ZnO Films Zhong Sheng, Xu Xiaoqiu, Sun Lijie, Lin Bixia, Fu Zhuxi, et al. Journal of Semiconductors, 2008, 29(7): 1330-1333. |
| 7 |
Preparation and Acetone Sensing Properties of Flower-Like ZnO Nanorods Liu Li, Feng Yingliang, Yu Lianxiang, Wang Lianyuan, Zhang Tong, et al. Journal of Semiconductors, 2008, 29(12): 2372-2375. |
| 8 |
Defects and Properties of Antimony-Doped ZnO Single Crystal Zhang Rui, Zhang Fan, Zhao Youwen, Dong Zhiyuan, Yang Jun, et al. Journal of Semiconductors, 2008, 29(10): 1988-1991. |
| 9 |
Property of Ni-Doped ZnO-Based DMSs Xiu Xiangqian, Li Binbin, Zhang Rong, Chen Lin, Xie Zili, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 145-148. |
| 10 |
Cao Qiang, Liu Guolei, Deng Jiangxia, Xing Pengfei, Tian Yufeng, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 282-284. |
| 11 |
First-Principles Calculation of ZnO Doped with Ag Wan Qixin, Xiong Zhihua, Rao Jianping, Dai Jiangnan, Le Shuping, et al. Chinese Journal of Semiconductors , 2007, 28(5): 696-700. |
| 12 |
Fabrication and Magnetic Property of Mn Doped ZnO Nanowires Chang Yongqin, Yu Dapeng, Long Yi Chinese Journal of Semiconductors , 2007, 28(S1): 296-299. |
| 13 |
Simulation of the ZnO-MOCVD Horizontal Reactor Geometry Liu Songmin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 309-311. |
| 14 |
Low Temperature Synthesis and Optical Properties of ZnO Nanowires Chang Peng, Liu Su, Chen Rongbo, Tang Ying, Han Genliang, et al. Chinese Journal of Semiconductors , 2007, 28(10): 1503-1507. |
| 15 |
Defects and Their Influence on Properties of Bulk ZnO Single Crystal Wei Xuecheng, Zhao Youwen, Dong Zhiyuan, Li Jinmin Chinese Journal of Semiconductors , 2006, 27(10): 1759-1762. |
| 16 |
Optical and Electrical Properties of ZnO/PS Heterostructure Zhao Bo, Li Qingshan, Zhang Ning, Chen Da, Zheng Xuegang, et al. Chinese Journal of Semiconductors , 2006, 27(7): 1217-1220. |
| 17 |
Effect of Growth Temperature on Properties of ZnO Thin Films Su Hongbo, Dai Jiangnan, Pu Yong, Wang Li, Li Fan, et al. Chinese Journal of Semiconductors , 2006, 27(7): 1221-1224. |
| 18 |
Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties Zhang Qifeng, Rong Yi, 陈贤祥, Chen Xianxiang, 张兆祥, et al. Chinese Journal of Semiconductors , 2006, 27(7): 1225-1229. |
| 19 |
Solution Growth of Morphology Controllable ZnO One-Dimensional Nanorods and Microrods Zhang Linli, Guo Changxin, Chen Jiangang, Hu Juntao Chinese Journal of Semiconductors , 2005, 26(11): 2127-2132. |
| 20 |
Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method Ye Zhizhen, Xu Weizhong, Zeng Yujia, Jiang Liu, Zhao Binghui, et al. Chinese Journal of Semiconductors , 2005, 26(11): 2264-2266. |
Article views: 3451 Times PDF downloads: 1762 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 07 September 2010 Online: Published: 01 January 2011
| Citation: |
Kh. S. Karimov, M. Saleem, T. A. Qasuria, M. Farooq. Surface-type humidity sensor based on cellulose-PEPC for telemetry systems[J]. Journal of Semiconductors, 2011, 32(1): 015005. doi: 10.1088/1674-4926/32/1/015005
****
Kh. S. Karimov, M. Saleem, T. A. Qasuria, M. Farooq. Surface-type humidity sensor based on cellulose-PEPC for telemetry systems[J]. J. Semicond., 2011, 32(1): 015005. doi: 10.1088/1674-4926/32/1/015005.
|
WeChat ID
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
DownLoad: