1 |
Comparative analysis of memristor models and memories design
Jeetendra Singh, Balwinder Raj
Journal of Semiconductors, 2018, 39(7): 074006. doi: 10.1088/1674-4926/39/7/074006
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2 |
Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes
Hui Wang, Yingxi Niu, Fei Yang, Yong Cai, Zehong Zhang, et al.
Journal of Semiconductors, 2015, 36(10): 104006. doi: 10.1088/1674-4926/36/10/104006
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3 |
Modeling of enclosed-gate layout transistors as ESD protection device based on conformal mapping method
Jia Zhang, Haigang Yang, Jiabin Sun, Le Yu, Yuanfeng Wei, et al.
Journal of Semiconductors, 2014, 35(8): 085001. doi: 10.1088/1674-4926/35/8/085001
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4 |
Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode
A. Resfa, Brahimi.R. Menezla, M. Benchhima
Journal of Semiconductors, 2014, 35(8): 084002. doi: 10.1088/1674-4926/35/8/084002
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5 |
Modeling the defect distribution and degradation of CdTe ultrathin films
Nima E. Gorji
Journal of Semiconductors, 2014, 35(12): 122001. doi: 10.1088/1674-4926/35/12/122001
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6 |
The design of electroabsorption modulators with negative chirp and very low insertion loss
Kambiz Abedi
Journal of Semiconductors, 2012, 33(6): 064001. doi: 10.1088/1674-4926/33/6/064001
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7 |
A fuzzy-logic-based approach to accurate modeling of a double gate MOSFETfor nanoelectronic circuit design
F. Djeffal, A. Ferdi, M. Chahdi
Journal of Semiconductors, 2012, 33(9): 094001. doi: 10.1088/1674-4926/33/9/094001
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8 |
Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs
Jin Xiaoshi, Liu Xi, Wu Meile, Chuai Rongyan, Jung-Hee Lee, et al.
Journal of Semiconductors, 2012, 33(12): 124003. doi: 10.1088/1674-4926/33/12/124003
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9 |
Gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET
Ashwani K. Rana, Narottam Chand, Vinod Kapoor
Journal of Semiconductors, 2011, 32(7): 074001. doi: 10.1088/1674-4926/32/7/074001
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10 |
Preparation of Sn–Ag–In ternary solder bumps by electroplating in sequence and reliability
Wang Dongliang, Yuan Yuan, Luo Le
Journal of Semiconductors, 2011, 32(8): 083005. doi: 10.1088/1674-4926/32/8/083005
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11 |
RF CMOS modeling: a scalable model of RF-MOSFET with different numbers of fingers
Yu Yuning, Sun Lingling, Liu Jun
Journal of Semiconductors, 2010, 31(11): 114007. doi: 10.1088/1674-4926/31/11/114007
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12 |
MEXTRAM model based SiGe HBT large-signal modeling
Han Bo, Li Shoulin, Cheng Jiali, Yin Qiuyan, Gao Jianjun, et al.
Journal of Semiconductors, 2010, 31(10): 104004. doi: 10.1088/1674-4926/31/10/104004
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13 |
Sigma–delta modulator modeling analysis and design
Ge Binjie, Wang Xin'an, Zhang Xing, Feng Xiaoxing, Wang Qingqin, et al.
Journal of Semiconductors, 2010, 31(9): 095003. doi: 10.1088/1674-4926/31/9/095003
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14 |
A low power cyclic ADC design for a wireless monitoring system for orthopedic implants
Chen Yi, Li Fule, Chen Hong, Zhang Chun, Wang Zhihua, et al.
Journal of Semiconductors, 2009, 30(8): 085009. doi: 10.1088/1674-4926/30/8/085009
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15 |
Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies
Xia Jun, Wang Zhigong, Wu Xiushan, Li Wei
Journal of Semiconductors, 2008, 29(3): 467-472.
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16 |
A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs
Lu Jing, Wang Yan, Ma Long, Yu Zhiping
Chinese Journal of Semiconductors , 2007, 28(4): 567-572.
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17 |
RF-CMOS Modeling:Parasitic Analysis for MOST On-Wafer Test Structure
Liu Jun, Sun Lingling, Xu Xiaojun
Chinese Journal of Semiconductors , 2007, 28(2): 246-253.
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18 |
RF-CMOS Modeling:RF-MOSFET Modeling for Low Power Applications
Liu Jun, Sun Lingling, Xu Xiaojun
Chinese Journal of Semiconductors , 2007, 28(1): 131-137.
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19 |
Characterization and Modeling of Finite-Ground Coplanar Waveguides in 0.13μm CMOS
Chen Xu, Wang Zhigong
Chinese Journal of Semiconductors , 2006, 27(6): 982-987.
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20 |
Design and Realization of CPW Circuits Using EC-ANN Models for CPW Discontinuities
Hu jiang, Sun Lingling
Chinese Journal of Semiconductors , 2005, 26(12): 2320-2329.
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