Comparative analysis of memristor models and memories design

Jeetendra Singh, Balwinder Raj

Journal of Semiconductors, 2018, 39(7): 074006. doi: 10.1088/1674-4926/39/7/074006

Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes

Hui Wang, Yingxi Niu, Fei Yang, Yong Cai, Zehong Zhang, et al.

Journal of Semiconductors, 2015, 36(10): 104006. doi: 10.1088/1674-4926/36/10/104006

Modeling of enclosed-gate layout transistors as ESD protection device based on conformal mapping method

Jia Zhang, Haigang Yang, Jiabin Sun, Le Yu, Yuanfeng Wei, et al.

Journal of Semiconductors, 2014, 35(8): 085001. doi: 10.1088/1674-4926/35/8/085001

Simulating and modeling the breakdown voltage in a semi-insulating GaAs P⁺N junction diode

A. Resfa, Brahimi.R. Menezla, M. Benchhima

Journal of Semiconductors, 2014, 35(8): 084002. doi: 10.1088/1674-4926/35/8/084002

Modeling the defect distribution and degradation of CdTe ultrathin films

Nima E. Gorji

Journal of Semiconductors, 2014, 35(12): 122001. doi: 10.1088/1674-4926/35/12/122001

The design of electroabsorption modulators with negative chirp and very low insertion loss

Kambiz Abedi

Journal of Semiconductors, 2012, 33(6): 064001. doi: 10.1088/1674-4926/33/6/064001

A fuzzy-logic-based approach to accurate modeling of a double gate MOSFETfor nanoelectronic circuit design

F. Djeffal, A. Ferdi, M. Chahdi

Journal of Semiconductors, 2012, 33(9): 094001. doi: 10.1088/1674-4926/33/9/094001

Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs

Jin Xiaoshi, Liu Xi, Wu Meile, Chuai Rongyan, Jung-Hee Lee, et al.

Journal of Semiconductors, 2012, 33(12): 124003. doi: 10.1088/1674-4926/33/12/124003

Gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET

Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Journal of Semiconductors, 2011, 32(7): 074001. doi: 10.1088/1674-4926/32/7/074001

Preparation of Sn–Ag–In ternary solder bumps by electroplating in sequence and reliability

Wang Dongliang, Yuan Yuan, Luo Le

Journal of Semiconductors, 2011, 32(8): 083005. doi: 10.1088/1674-4926/32/8/083005

RF CMOS modeling: a scalable model of RF-MOSFET with different numbers of fingers

Yu Yuning, Sun Lingling, Liu Jun

Journal of Semiconductors, 2010, 31(11): 114007. doi: 10.1088/1674-4926/31/11/114007

MEXTRAM model based SiGe HBT large-signal modeling

Han Bo, Li Shoulin, Cheng Jiali, Yin Qiuyan, Gao Jianjun, et al.

Journal of Semiconductors, 2010, 31(10): 104004. doi: 10.1088/1674-4926/31/10/104004

Sigma–delta modulator modeling analysis and design

Ge Binjie, Wang Xin'an, Zhang Xing, Feng Xiaoxing, Wang Qingqin, et al.

Journal of Semiconductors, 2010, 31(9): 095003. doi: 10.1088/1674-4926/31/9/095003

A low power cyclic ADC design for a wireless monitoring system for orthopedic implants

Chen Yi, Li Fule, Chen Hong, Zhang Chun, Wang Zhihua, et al.

Journal of Semiconductors, 2009, 30(8): 085009. doi: 10.1088/1674-4926/30/8/085009

Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies

Xia Jun, Wang Zhigong, Wu Xiushan, Li Wei

Journal of Semiconductors, 2008, 29(3): 467-472.

A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs

Lu Jing, Wang Yan, Ma Long, Yu Zhiping

Chinese Journal of Semiconductors , 2007, 28(4): 567-572.

RF-CMOS Modeling:Parasitic Analysis for MOST On-Wafer Test Structure

Liu Jun, Sun Lingling, Xu Xiaojun

Chinese Journal of Semiconductors , 2007, 28(2): 246-253.

RF-CMOS Modeling:RF-MOSFET Modeling for Low Power Applications

Liu Jun, Sun Lingling, Xu Xiaojun

Chinese Journal of Semiconductors , 2007, 28(1): 131-137.

Characterization and Modeling of Finite-Ground Coplanar Waveguides in 0.13μm CMOS

Chen Xu, Wang Zhigong

Chinese Journal of Semiconductors , 2006, 27(6): 982-987.

Design and Realization of CPW Circuits Using EC-ANN Models for CPW Discontinuities

Hu jiang, Sun Lingling

Chinese Journal of Semiconductors , 2005, 26(12): 2320-2329.