J. Semicond. > 2011, Volume 32 > Issue 10 > 105012

SEMICONDUCTOR INTEGRATED CIRCUITS

An electroplating topography model based on layout-dependent variation of copper deposition rate

Wang Qiang, Chen Lan, Li Zhigang and Ruan Wenbiao

+ Author Affiliations
DOI: 10.1088/1674-4926/32/10/105012

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Abstract: A layout-pattern-dependent electroplating model is developed based on the physical mechanism of the electroplating process. Our proposed electroplating model has an advantage over former ones due to a consideration of the variation of copper deposition rate with different layout parameters during the process. The simulation results compared with silicon data demonstrate the improvement in accuracy.

Key words: design for manufacturing electroplating modeling

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    Received: 20 August 2015 Revised: 25 May 2011 Online: Published: 01 October 2011

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      Wang Qiang, Chen Lan, Li Zhigang, Ruan Wenbiao. An electroplating topography model based on layout-dependent variation of copper deposition rate[J]. Journal of Semiconductors, 2011, 32(10): 105012. doi: 10.1088/1674-4926/32/10/105012 ****Wang Q, Chen L, Li Z G, Ruan W B. An electroplating topography model based on layout-dependent variation of copper deposition rate[J]. J. Semicond., 2011, 32(10): 105012. doi: 10.1088/1674-4926/32/10/105012.
      Citation:
      Wang Qiang, Chen Lan, Li Zhigang, Ruan Wenbiao. An electroplating topography model based on layout-dependent variation of copper deposition rate[J]. Journal of Semiconductors, 2011, 32(10): 105012. doi: 10.1088/1674-4926/32/10/105012 ****
      Wang Q, Chen L, Li Z G, Ruan W B. An electroplating topography model based on layout-dependent variation of copper deposition rate[J]. J. Semicond., 2011, 32(10): 105012. doi: 10.1088/1674-4926/32/10/105012.

      An electroplating topography model based on layout-dependent variation of copper deposition rate

      DOI: 10.1088/1674-4926/32/10/105012
      Funds:

      National Major Science and Technology special project

      • Received Date: 2015-08-20
      • Accepted Date: 2011-04-12
      • Revised Date: 2011-05-25
      • Published Date: 2011-09-20

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