| Citation: |
Hu Yi, Liu Yuling, Liu Xiaoyan, Wang Liran, He Yangang. Effect of copper slurry on polishing characteristics[J]. Journal of Semiconductors, 2011, 32(11): 116001. doi: 10.1088/1674-4926/32/11/116001
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Hu Y, Liu Y L, Liu X Y, Wang L R, He Y G. Effect of copper slurry on polishing characteristics[J]. J. Semicond., 2011, 32(11): 116001. doi: 10.1088/1674-4926/32/11/116001.
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Abstract
The composition of the polishing solution is optimized by investigating the impact of the WIWNU (the so-called within-wafer-non-uniformity WIWNU) and the removal rate (RR) on the polishing characteristics of copper. The oxidizer concentration is 1 Vol%; the abrasive concentration is 0.8 Vol%; the chelating agent of the solution is 2 Vol%. The working pressure is 1 kPa. The defect on the surface is degraded and the surface is clean after polishing. The removal rate is 289 nm/min and the WIWNU is 0.065. The surface roughness measured by AFM after CMP (chemical mechanical planarization) is 0.22 nm.-
Keywords:
- copper slurry,
- chemical mechanical planarization,
- WIWNU
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References
[1] [2] [3] [4] [5] [6] [7] -
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