| Citation: |
Liu Bo, Feng Zhihong, Zhang Sen, Dun Shaobo, Yin Jiayun, Li Jia, Wang Jingjing, Zhang Xiaowei, Fang Yulong, Cai Shujun. A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate[J]. Journal of Semiconductors, 2011, 32(12): 124003. doi: 10.1088/1674-4926/32/12/124003
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Liu B, Feng Z H, Zhang S, Dun S B, Yin J Y, Li J, Wang J J, Zhang X W, Fang Y L, Cai S J. A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate[J]. J. Semicond., 2011, 32(12): 124003. doi: 10.1088/1674-4926/32/12/124003.
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A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
DOI: 10.1088/1674-4926/32/12/124003
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Abstract
We report high performance InAlN/GaN HEMTs grown on sapphire substrates. The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm2/(V·s) under a sheet density of 2.6 × 1013 cm-2. Large signal load-pull measurements for a (2 × 100 μm) × 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InAlN/GaN HEMTs in mainland China.-
Keywords:
- InAlN/GaN
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References
[1] [2] [3] [4] [5] [6] [7] -
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