| Citation: |
Chen Feihua, Li Lingyun, Duo Xinzhong, Tian Tong, Sun Xiaowei. A CMOS variable gain LNA for UWB receivers[J]. Journal of Semiconductors, 2011, 32(2): 025004. doi: 10.1088/1674-4926/32/2/025004
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Chen F H, Li L Y, Duo X Z, Tian T, Sun X W. A CMOS variable gain LNA for UWB receivers[J]. J. Semicond., 2011, 32(2): 025004. doi: 10.1088/1674-4926/32/2/025004.
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Abstract
A CMOS variable gain low noise amplifier (LNA) is presented for 4.2--4.8 GHz ultra-wideband application in accordance with Chinese standard. The design method for the wideband input matching is presented and the low noise performance of the LNA is illustrated. A three-bit digital programmable gain control circuit is exploited to achieve variable gain. The design was implemented in 0.13-μm RF CMOS process, and the die occupies an area of 0.9 mm2 with ESD pads. Totally the circuit draws 18 mA DC current from 1.2 V DC supply, the LNA exhibits minimum noise figure of 2.3 dB, S(1,1) less than --9 dB and S(2,2) less than --10 dB. The maximum and the minimum power gains are 28.5 dB and 16 dB respectively. The tuning step of the gain is about 4 dB with four steps in all. Also the input 1 dB compression point is --10 dBm and input third order intercept point (IIP3) is --2 dBm.-
Keywords:
- low noise amplifier,
- ultra-wideband,
- variable gain,
- RF CMOS
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References
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