| Citation: |
Wang Yiyuan, Lu Wu, Ren Diyuan, Guo Qi, Yu Xuefeng, Gao Bo. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases[J]. Journal of Semiconductors, 2011, 32(3): 034007. doi: 10.1088/1674-4926/32/3/034007
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Wang Y Y, Lu W, Ren D Y, Guo Q, Yu X F, Gao B. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases[J]. J. Semicond., 2011, 32(3): 034007. doi: 10.1088/1674-4926/32/3/034007.
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The enhanced low dose rate sensitivity of a linear voltage regulator with different biases
DOI: 10.1088/1674-4926/32/3/034007
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Abstract
A linear voltage regulator was irradiated by 60Coγ at high and low dose rates with two bias conditions to investigate the dose rate effect. The devices exhibit enhanced low dose rate sensitivity (ELDRS) under both biases. Comparing the enhancement factors between zero and working biases, it was found that the ELDRS is more severe under zero bias conditions. This confirms that the ELDRS is related to the low electric field in a bipolar structure. The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator. This may be helpful for designing radiation hardened devices.-
Keywords:
- linear voltage regulator,
- ELDRS,
- bias dependence
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References
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Proportional views
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