Citation: |
Yan Wei, Li Wenhong, Liu Ran. A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference[J]. Journal of Semiconductors, 2011, 32(4): 045011. doi: 10.1088/1674-4926/32/4/045011
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Yan W, Li W H, Liu R. A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference[J]. J. Semicond., 2011, 32(4): 045011. doi: 10.1088/1674-4926/32/4/045011.
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A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference
DOI: 10.1088/1674-4926/32/4/045011
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Abstract
A nanopower switched-capacitor CMOS sub-bandgap voltage reference has been implemented using a Chartered 0.35-μm 3.3-V/5-V dual gate mixed-signal CMOS process. The proposed circuit generates a precise sub-bandgap voltage of 1 V. The temperature coefficient of the output voltage is 13.4 ppm/℃ with the temperature varying from –20 to 80 ℃. The proposed circuit operates properly with the supply voltage down to 1.3 V, and consumes 150 nA at room temperature. The line regulation is 0.27%/V. The power supply rejection ratio at 100 Hz and 1 MHz is –39 dB and –51 dB, respectively. The chip area is 0.2 mm2.-
Keywords:
- nanopower
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References
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Proportional views