Citation: |
A. R. Babar, S. S. Shinde, A.V. Moholkar, C. H. Bhosale, J. H. Kim, K. Y. Rajpure. Physical properties of sprayed antimony doped tin oxide thin films: Role of thickness[J]. Journal of Semiconductors, 2011, 32(5): 053001. doi: 10.1088/1674-4926/32/5/053001
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A R Babar, S S Shinde, A V Moholkar, C H Bhosale, J H Kim, K Y Rajpure. Physical properties of sprayed antimony doped tin oxide thin films: Role of thickness[J]. J. Semicond., 2011, 32(5): 053001. doi: 10.1088/1674-4926/32/5/053001.
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Physical properties of sprayed antimony doped tin oxide thin films: Role of thickness
DOI: 10.1088/1674-4926/32/5/053001
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Abstract
Transparent conducting antimony doped tin oxide (Sb:SnO2) thin films have been deposited onto preheated glass substrates using a spray pyrolysis technique by varying the quantity of spraying solution. The structural, morphological, X-ray photoelectron spectroscopy, optical, photoluminescence and electrical properties of these films have been studied. It is found that the films are polycrystalline in nature with a tetragonal crystal structure having orientation along the (211) and (112) planes. Polyhedrons like grains appear in the FE-SEM images. The average grain size increases with increasing spraying quantity. The compositional analysis and electronic behaviour of Sb:SnO2 thin films were studied using X-ray photoelectron spectroscopy. The binding energy of Sn3d5/2 for all samples shows the Sn4 bonding state from SnO2. An intensive violet luminescence peak near 395 nm is observed at room temperature due to oxygen vacancies or donor levels formed by Sb5 ions. The film deposited with 20 cc solution shows 70% transmittance at 550 nm leading to the highest figure of merit (2.11 × 10-3 Ω-1). The resistivity and carrier concentration vary over 1.22 × 10-3 to 0.89 × 10-3Ωcm and 5.19 × 1020 to 8.52 × 1020 cm-3, respectively. -
References
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