J. Semicond. > 2011, Volume 32 > Issue 6 > 064010

SEMICONDUCTOR DEVICES

Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

Wang Hanchao, Huang Lirong and Shi Zhongwei

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DOI: 10.1088/1674-4926/32/6/064010

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Abstract: A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influenced by the distribution of the injection current density. By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled.

Key words: semiconductor optical amplifier (SOA)current densityamplified spontaneous emission (ASE)gain characteristic

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    Wang Hanchao, Huang Lirong, Shi Zhongwei. Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier[J]. Journal of Semiconductors, 2011, 32(6): 064010. doi: 10.1088/1674-4926/32/6/064010
    Wang H C, Huang L R, Shi Z W. Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier[J]. J. Semicond., 2011, 32(6): 064010. doi: 10.1088/1674-4926/32/6/064010.
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    Received: 18 August 2015 Revised: 23 February 2011 Online: Published: 01 June 2011

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      Wang Hanchao, Huang Lirong, Shi Zhongwei. Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier[J]. Journal of Semiconductors, 2011, 32(6): 064010. doi: 10.1088/1674-4926/32/6/064010 ****Wang H C, Huang L R, Shi Z W. Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier[J]. J. Semicond., 2011, 32(6): 064010. doi: 10.1088/1674-4926/32/6/064010.
      Citation:
      Wang Hanchao, Huang Lirong, Shi Zhongwei. Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier[J]. Journal of Semiconductors, 2011, 32(6): 064010. doi: 10.1088/1674-4926/32/6/064010 ****
      Wang H C, Huang L R, Shi Z W. Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier[J]. J. Semicond., 2011, 32(6): 064010. doi: 10.1088/1674-4926/32/6/064010.

      Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

      DOI: 10.1088/1674-4926/32/6/064010
      • Received Date: 2015-08-18
      • Accepted Date: 2010-12-28
      • Revised Date: 2011-02-23
      • Published Date: 2011-05-23

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