J. Semicond. > 2011, Volume 32 > Issue 6 > 066001

SEMICONDUCTOR TECHNOLOGY

Influence of window layer thickness on double layer antireflection coating for triple junction solar cells

Wang Lijuan, Zhan Feng, Yu Ying, Zhu Yan, Liu Shaoqing, Huang Shesong, Ni Haiqiao and Niu Zhichuan

+ Author Affiliations
DOI: 10.1088/1674-4926/32/6/066001

PDF

Abstract: The optimization of a SiO2/TiO2, SiO2/ZnS double layer antireflection coating (ARC) on Ga0.5In0.5P/In0.02Ga0.98As/Ge solar cells for terrestrial application is discussed. The Al0.5In0.5P window layer thickness is also taken into consideration. It is shown that the optimal parameters of double layer ARC vary with the thickness of the window layer.

Key words: reflection curves

1

Rational molecular passivation for high-performance perovskite light-emitting diodes

Jingbi You

Journal of Semiconductors, 2019, 40(4): 040203. doi: 10.1088/1674-4926/40/4/040203
2

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

G. Nagaraju, K. Ravindranatha Reddy, V. Rajagopal Reddy

Journal of Semiconductors, 2017, 38(11): 114001. doi: 10.1088/1674-4926/38/11/114001
3

The electronic and magnetic properties of wurtzite Mn:CdS, Cr:CdS and Mn:Cr:CdS: first principles calculations

Azeem Nabi, Zarmeena Akhtar, Tahir Iqbal, Atif Ali, Arshad Javid, et al.

Journal of Semiconductors, 2017, 38(7): 073001. doi: 10.1088/1674-4926/38/7/073001
4

Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO2/high-k gate stacked dielectric

S. Intekhab Amin, R. K. Sarin

Journal of Semiconductors, 2016, 37(3): 034001. doi: 10.1088/1674-4926/37/3/034001
5

Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Hongda Chen, Zan Zhang, Beiju Huang, Luhong Mao, Zanyun Zhang, et al.

Journal of Semiconductors, 2015, 36(12): 121001. doi: 10.1088/1674-4926/36/12/121001
6

Correlation between electrical conductivity-optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin films

Said Benramache, Okba Belahssen, Abderrazak Guettaf, Ali Arif

Journal of Semiconductors, 2013, 34(11): 113001. doi: 10.1088/1674-4926/34/11/113001
7

A fuzzy-logic-based approach to accurate modeling of a double gate MOSFETfor nanoelectronic circuit design

F. Djeffal, A. Ferdi, M. Chahdi

Journal of Semiconductors, 2012, 33(9): 094001. doi: 10.1088/1674-4926/33/9/094001
8

Electrical characterization of the organic semiconductor Ag/CuPc/Au Schottky diode

Mutabar Shah, M. H. Sayyad, Kh. S. Karimov

Journal of Semiconductors, 2011, 32(4): 044001. doi: 10.1088/1674-4926/32/4/044001
9

A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

Salahddine Krit, Hassan Qjidaa, Imad El Affar, Yafrah Khadija, Ziani Messghati, et al.

Journal of Semiconductors, 2010, 31(4): 045001. doi: 10.1088/1674-4926/31/4/045001
10

Effect of collector bias current on the linearity of common-emitter BJT amplifiers

Li Kun, Teng Jianfu, Xuan Xiuwei

Journal of Semiconductors, 2010, 31(12): 124012. doi: 10.1088/1674-4926/31/12/124012
11

CuPc based organic-inorganic hetero-junction with Au electrodes

Zubair Ahmad, Muhammad H. Sayyad, Kh. S. Karimov

Journal of Semiconductors, 2010, 31(7): 074002. doi: 10.1088/1674-4926/31/7/074002
12

CuPc/C60 heterojunction thin film optoelectronic devices

Imran Murtaza, Ibrahim Qazi, Khasan S. Karimov

Journal of Semiconductors, 2010, 31(6): 064005. doi: 10.1088/1674-4926/31/6/064005
13

Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE

Yang Ruixia, Wu Yibin, Niu Chenliang, Yang Fan

Journal of Semiconductors, 2010, 31(11): 113001. doi: 10.1088/1674-4926/31/11/113001
14

A VCO sub-band selection circuit for fast PLL calibration

Song Ying, Wang Yuan, Jia Song, Zhao Baoying

Journal of Semiconductors, 2009, 30(8): 085010. doi: 10.1088/1674-4926/30/8/085010
15

Electromigration-induced cracks in Cu/Sn3:5Ag/Cu solder reaction couple at room temperature

He Hongwen, Xu Guangchen, Guo Fu

Journal of Semiconductors, 2009, 30(3): 033006. doi: 10.1088/1674-4926/30/3/033006
16

Ternary logic circuit design based on single electron transistors

Wu Gang, Cai Li, Li Qin

Journal of Semiconductors, 2009, 30(2): 025011. doi: 10.1088/1674-4926/30/2/025011
17

Photolithography Process Simulation for Integrated Circuitsand Microelectromechanical System Fabrication

Zhou Zaifa, Huang Qing'an, Li Weihua

Chinese Journal of Semiconductors , 2006, 27(4): 705-711.

18

An Optoelectronic Pulse Frequency Modulation Circuitfor Retinal Prosthesis

Liu Jinbin, Chen Hongda, Gao Peng, Pei Weihua, Sui Xiaohong, et al.

Chinese Journal of Semiconductors , 2006, 27(4): 700-704.

19

Nonlinear Current-Voltage Characteristics and Electroluminescence of cBN Crystal

Dou Qingping, Chen Zhanguo, Jia Gang, Ma Haitao, Cao Kun, et al.

Chinese Journal of Semiconductors , 2006, 27(4): 609-612.

20

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

Niu Zhichuan, Ni Haiqiao, Fang Zhidan, Gong Zheng, Zhang Shiyong, et al.

Chinese Journal of Semiconductors , 2006, 27(3): 482-488.

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3850 Times PDF downloads: 3400 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 21 January 2011 Online: Published: 01 June 2011

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2011  >  32(6): 066001
      Wang Lijuan, Zhan Feng, Yu Ying, Zhu Yan, Liu Shaoqing, Huang Shesong, Ni Haiqiao, Niu Zhichuan. Influence of window layer thickness on double layer antireflection coating for triple junction solar cells[J]. Journal of Semiconductors, 2011, 32(6): 066001. doi: 10.1088/1674-4926/32/6/066001 ****Wang L J, Zhan F, Yu Y, Zhu Y, Liu S Q, Huang S S, Ni H Q, Niu Z C. Influence of window layer thickness on double layer antireflection coating for triple junction solar cells[J]. J. Semicond., 2011, 32(6): 066001. doi: 10.1088/1674-4926/32/6/066001.
      Citation:
      Wang Lijuan, Zhan Feng, Yu Ying, Zhu Yan, Liu Shaoqing, Huang Shesong, Ni Haiqiao, Niu Zhichuan. Influence of window layer thickness on double layer antireflection coating for triple junction solar cells[J]. Journal of Semiconductors, 2011, 32(6): 066001. doi: 10.1088/1674-4926/32/6/066001 ****
      Wang L J, Zhan F, Yu Y, Zhu Y, Liu S Q, Huang S S, Ni H Q, Niu Z C. Influence of window layer thickness on double layer antireflection coating for triple junction solar cells[J]. J. Semicond., 2011, 32(6): 066001. doi: 10.1088/1674-4926/32/6/066001.
      shu

      Influence of window layer thickness on double layer antireflection coating for triple junction solar cells

      DOI: 10.1088/1674-4926/32/6/066001

      • State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Received Date: 2015-08-18
      • Accepted Date: 2010-11-17
      • Revised Date: 2011-01-21
      • Published Date: 2011-05-23

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return