| Citation: |
Chen Wensuo, Zhang Bo, Fang Jian, Li Zhaoji. A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement[J]. Journal of Semiconductors, 2011, 32(7): 074005. doi: 10.1088/1674-4926/32/7/074005
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Chen W S, Zhang B, Fang J, Li Z J. A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement[J]. J. Semicond., 2011, 32(7): 074005. doi: 10.1088/1674-4926/32/7/074005.
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A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement
DOI: 10.1088/1674-4926/32/7/074005
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Abstract
A new lateral insulated-gate bipolar transistor with a controlled anode (CA-LIGBT) on silicon-on-insulator (SOI) substrate is reported. Benefiting from both the enhanced conductivity modulation effect and the high resistance controlled electron extracting path, CA-LIGBT has a faster turn-off speed and lower forward drop, and the trade-off between off-state and on-state losses is better than that of state-of-the-art 3-D NCA-LIGBT, which we presented earlier. As the simulation results show, the ratios of figure of merit (FOM) for CA-LIGBT compared to that of 3-D NCA-LIGBT and conventional LIGBT are 1.45 : 1 and 59.53 : 1, respectively. And, the new devices can be created by using additional silicon direct bonding (SDB). So, from the power efficiency point of view, the proposed CA-LIGBT is a promising device for use in power ICs.-
Keywords:
- controlled anode,
- turn-off time,
- forward drop,
- power IC
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] -
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