| Citation: |
Xu Jian, Wang Zhigong, Zhang Ying, Huang Jing. A 50 MHz–1 GHz high linearity CATV amplifier with a 0.15 μm InGaAs PHEMT process[J]. Journal of Semiconductors, 2011, 32(7): 075002. doi: 10.1088/1674-4926/32/7/075002
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Xu J, Wang Z G, Zhang Y, Huang J. A 50 MHz–1 GHz high linearity CATV amplifier with a 0.15 μm InGaAs PHEMT process[J]. J. Semicond., 2011, 32(7): 075002. doi: 10.1088/1674-4926/32/7/075002.
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A 50 MHz–1 GHz high linearity CATV amplifier with a 0.15 μm InGaAs PHEMT process
DOI: 10.1088/1674-4926/32/7/075002
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Abstract
A 50 MHz–1 GHz low noise and high linearity amplifier monolithic-microwave integrated-circuit (MMIC) for cable TV is presented. A shunt AC voltage negative feedback combined with source current negative feedback is adopted to extend the bandwidth and linearity. A novel DC bias feedback is introduced to stabilize the operation point, which improved the linearity further. The circuit was fabricated with a 0.15 μm InGaAs PHEMT (pseudomorphic high electron mobility transistor) process. The test was carried out in 75 Ω systems from 50 MHz to 1 GHz. The measurement results showed that it gave a small signal gain of 16.5 dB with little gain ripples of less than ±1 dB. An excellent noise figure of 1.7–2.9 dB is obtained in the designed band. The IIP3 is 16 dBm, which shows very good linearity. The CSO and CTB are high up to 68 dBc and 77 dBc, respectively. The chip area is 0.56 mm2 and the power dissipation is 110 mA with a 5 V supply. It is ideally suited to cable TV systems.-
Keywords:
- low noise,
- high linearity,
- MMIC,
- InGaAs PHEMT process,
- CATV amplifier
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References
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