| Citation: |
Li Lezhong, Yang Weiqing, Ding Yingchun, Zhu Xinghua. First principle study of the electronic structure of hafnium-doped anatase TiO2[J]. Journal of Semiconductors, 2012, 33(1): 012002. doi: 10.1088/1674-4926/33/1/012002
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Li L Z, Yang W Q, Ding Y C, Zhu X H. First principle study of the electronic structure of hafnium-doped anatase TiO2[J]. J. Semicond., 2012, 33(1): 012002. doi: 10.1088/1674-4926/33/1/012002.
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First principle study of the electronic structure of hafnium-doped anatase TiO2
DOI: 10.1088/1674-4926/33/1/012002
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Abstract
Crystal structures and electronic structures of hafnium doping anatase TiO2 were calculated by first principles with the plane-wave ultrasoft pseudopotential method based on the density functional theory within the generalized gradient approximation. The calculated results show that the lattice parameters a and c of Hf-doped anatase TiO2 are larger than those of intrinsic TiO2 under the same calculated condition. The calculated band structure and density of states show that the conduction band width of Hf-doped TiO2 is broadened which results in the band gap of Hf-doped being smaller than the band gap of TiO2.-
Keywords:
- Hf-doped,
- anatase TiO2,
- first principle,
- crystal structure
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References
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