| Citation: |
Toufik Bentrcia, Faycal Djeffal, Abdel Hamid Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. Journal of Semiconductors, 2012, 33(1): 014001. doi: 10.1088/1674-4926/33/1/014001
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T Bentrcia, F Djeffal, A H Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. J. Semicond., 2012, 33(1): 014001. doi: 10.1088/1674-4926/33/1/014001.
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Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects
DOI: 10.1088/1674-4926/33/1/014001
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Abstract
We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate (GS DG) MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage (I-V) model, derived based on both Poisson's and continuity equations without the need of charge-sheet approximation. The developed model offers the possibility to describe the entire range of different regions (subthreshold, linear and saturation) through a unique continuous expression. Therefore, the proposed approach can bring considerable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects. -
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