| Citation: |
Zhou Wenfei, Ye Xiaoling, Xu Bo, Zhang Shizhu, Wang Zhanguo. Protection effect of a SiO2 layer in Al0.85Ga0.15As wet oxidation[J]. Journal of Semiconductors, 2012, 33(10): 102002. doi: 10.1088/1674-4926/33/10/102002
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Zhou W F, Ye X L, Xu B, Zhang S Z, Wang Z G. Protection effect of a SiO2 layer in Al0.85Ga0.15As wet oxidation[J]. J. Semicond., 2012, 33(10): 102002. doi: 10.1088/1674-4926/33/10/102002.
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Protection effect of a SiO2 layer in Al0.85Ga0.15As wet oxidation
DOI: 10.1088/1674-4926/33/10/102002
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Abstract
The Al0.85Ga0.15As layers buried below the GaAs core layer with and without the SiO2 layer were successfully oxidized in a wet ambient environment. The experimental results show that the SiO2 layer has little impact on the lateral-wet-oxidation rate of the Al0.85Ga0.15As layer. The contrast of the SEM image of the oxidized regions and the absence of As-related Raman peaks for samples with the SiO2 layer arise from the removal of As ingredients with the largest atomic number, which leads to improvements in the thermal stability of the oxidized layer. The PL intensities of samples with the SiO2 layer are much stronger than those without the SiO2 layer. The PL emission peak is almost unshifted with a slight broadening under the protection of the SiO2 layer. This is attributed to the SiO2 layer preventing oxidation damage to the GaAs capping layer.-
Keywords:
- lateral wet oxidation,
- SiO2 protection layer,
- InAs QDs
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References
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