A low power 2.5-5 GHz low-noise amplifier using 0.5-<i>μ</i>m GaAs pHEMT technology

Peng Yangyang; Lu Kejie; Sui Wenquan

doi:10.1088/1674-4926/33/10/105001

J. Semicond. > 2012, Volume 33 > Issue 10 > 105001

SEMICONDUCTOR INTEGRATED CIRCUITS

A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology

Peng Yangyang, Lu Kejie and Sui Wenquan

+ Author Affiliations

DOI: 10.1088/1674-4926/33/10/105001

Abstract: A two-stage 2.5-5 GHz monolithic low-noise amplifier (LNA) has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology. To achieve wide operation bandwidth and low noise figure, the proposed LNA uses a wideband matching network and a negative feedback technique. Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain. The input and output return loss exceeded -10-dB across the band. The power consumption of this LNA is 33 mW. According to the author's knowledge, this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.

Key words: LNA

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Peng Yangyang, Lu Kejie, Sui Wenquan. A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology[J]. Journal of Semiconductors, 2012, 33(10): 105001. doi: 10.1088/1674-4926/33/10/105001

Peng Y Y, Lu K J, Sui W Q. A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology[J]. J. Semicond., 2012, 33(10): 105001. doi: 10.1088/1674-4926/33/10/105001.

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Received: 20 August 2015 Revised: 21 November 2011 Online: Published: 01 October 2012

A two-stage 2.5-5 GHz monolithic low-noise amplifier (LNA) has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology. To achieve wide operation bandwidth and low noise figure, the proposed LNA uses a wideband matching network and a negative feedback technique. Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain. The input and output return loss exceeded -10-dB across the band. The power consumption of this LNA is 33 mW. According to the author's knowledge, this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.

A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology

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