J. Semicond. > 2012, Volume 33 > Issue 10 > 105009
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SEMICONDUCTOR INTEGRATED CIRCUITS

Design and optimization of a 0.5 V CMOS LNA for 2.4-GHz WSN application

Chen Liang and Li Zhiqun

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DOI: 10.1088/1674-4926/33/10/105009

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Abstract: This paper presents a low noise amplifier (LNA), which could work at an ultra-low voltage of 0.5 V and was optimized for WSN application using 0.13 μm RF-CMOS technology. The circuit was analyzed and a new optimization method for a folded cascode LNA was introduced. Measured results of the proposed circuit demonstrated a power gain of 14.13 dB, consuming 3 mW DC power, showing 1.96 dB NF and an input 1-dB compression point of -19.9 dBm. Both input power matching (S11) and output power matching (S22) were below -10 dB. The results indicate that this LNA is fully applicable to low voltage and low power applications.

Key words: LNA

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    Received: 20 August 2015 Revised: 20 April 2012 Online: Published: 01 October 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(10): 105009
      Chen Liang, Li Zhiqun. Design and optimization of a 0.5 V CMOS LNA for 2.4-GHz WSN application[J]. Journal of Semiconductors, 2012, 33(10): 105009. doi: 10.1088/1674-4926/33/10/105009 ****Chen L, Li Z Q. Design and optimization of a 0.5 V CMOS LNA for 2.4-GHz WSN application[J]. J. Semicond., 2012, 33(10): 105009. doi: 10.1088/1674-4926/33/10/105009.
      Citation:
      Chen Liang, Li Zhiqun. Design and optimization of a 0.5 V CMOS LNA for 2.4-GHz WSN application[J]. Journal of Semiconductors, 2012, 33(10): 105009. doi: 10.1088/1674-4926/33/10/105009 ****
      Chen L, Li Z Q. Design and optimization of a 0.5 V CMOS LNA for 2.4-GHz WSN application[J]. J. Semicond., 2012, 33(10): 105009. doi: 10.1088/1674-4926/33/10/105009.
      shu

      Design and optimization of a 0.5 V CMOS LNA for 2.4-GHz WSN application

      DOI: 10.1088/1674-4926/33/10/105009

      • Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China

      • Engineering Research Center of RF-ICs & RF-Systems, Ministry of Education, Southeast University, Nanjing 210096, China

      • Jiangsu Provincial Key Laboratory of Sensor Network Technology, Wuxi 214135, China

      • Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China

      • Engineering Research Center of RF-ICs & RF-Systems, Ministry of Education, Southeast University, Nanjing 210096, China

      • Jiangsu Provincial Key Laboratory of Sensor Network Technology, Wuxi 214135, China

      Funds:

      National High Technology Research and Development Program (No. 2007AA01Z2A7) and the Special Fund of Jiangsu Province for the Transformation of Scientific and Technological Achievements (No. BA2010073）

      • Received Date: 2015-08-20
      • Accepted Date: 2012-03-12
      • Revised Date: 2012-04-20
      • Published Date: 2012-09-10

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