| Citation: |
Zheng Wenli, Li Tinghui. Compositional dependence of Raman frequencies in SixGe1-x alloys[J]. Journal of Semiconductors, 2012, 33(11): 112001. doi: 10.1088/1674-4926/33/11/112001
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Zheng W L, Li T H. Compositional dependence of Raman frequencies in SixGe1-x alloys[J]. J. Semicond., 2012, 33(11): 112001. doi: 10.1088/1674-4926/33/11/112001.
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Compositional dependence of Raman frequencies in SixGe1-x alloys
DOI: 10.1088/1674-4926/33/11/112001
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Abstract
Increases in Si content and the calculated Raman spectra acquired from the SixGe1-x alloys reveal that the frequencies of the Ge-Si and Si-Si modes are up-shifted obviously, meanwhile that of the Ge-Ge optical mode is down-shifted, which is strongly dependent on their microstructural changes. The linear decrease and increase caused by their force constant (bond lengths and bond angles) changes, which can be used as a fingerprint to identify the average Si content. The complex microstructural changes induced by increasing Si content can be clearly displayed by Raman spectra transformation.-
Keywords:
- Raman spectroscopy,
- SixGe1-x nanocrystals,
- DFT calculation
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] -
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