J. Semicond. > 2012, Volume 33 > Issue 12 > 124002
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SEMICONDUCTOR DEVICES

High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter

Wang Wei, Sun Hao, Teng Teng and Sun Xiaowei

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DOI: 10.1088/1674-4926/33/12/124002

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Abstract: An In0.53Ga0.47As/AlAs resonant tunneling diode (RTD) with a high doping emitter is designed and fabricated using air bridge technology. The RTD exhibits a high peak-to-valley current ratio (PVCR) of more than 40 at room temperature, with a peak current density of 24 kA/cm2. The extraction of device parameters from DC and microwave measurements is presented together with an RTD equivalent circuit. The high PVCR RTD with small intrinsic capacitance is favorable for microwave/THz applications.

Key words: resonant tunneling diode, I-V characteristics, peak-to-valley current ratio, equivalent circuit, ewline S-parameters

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    Received: 21 August 2015 Revised: 03 July 2012 Online: Published: 01 December 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(12): 124002
      Wang Wei, Sun Hao, Teng Teng, Sun Xiaowei. High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter[J]. Journal of Semiconductors, 2012, 33(12): 124002. doi: 10.1088/1674-4926/33/12/124002 ****Wang W, Sun H, Teng T, Sun X W. High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter[J]. J. Semicond., 2012, 33(12): 124002. doi: 10.1088/1674-4926/33/12/124002.
      Citation:
      Wang Wei, Sun Hao, Teng Teng, Sun Xiaowei. High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter[J]. Journal of Semiconductors, 2012, 33(12): 124002. doi: 10.1088/1674-4926/33/12/124002 ****
      Wang W, Sun H, Teng T, Sun X W. High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter[J]. J. Semicond., 2012, 33(12): 124002. doi: 10.1088/1674-4926/33/12/124002.
      shu

      High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter

      DOI: 10.1088/1674-4926/33/12/124002

      • Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • University of Chinese Academy of Sciences, Beijing 100039, China

      • Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • University of Chinese Academy of Sciences, Beijing 100039, China

      • Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      Funds:

      National Basic Research Program of China

      • Received Date: 2015-08-21
      • Accepted Date: 2012-04-26
      • Revised Date: 2012-07-03
      • Published Date: 2012-11-13

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