| Citation: |
Lin Aiguo, Ding Jianning, Yuan Ningyi, Wang Shubo, Chen Guanggui, Lu Chao. Analysis of the p+/p window layer of thin film solar cells by simulation[J]. Journal of Semiconductors, 2012, 33(2): 023002. doi: 10.1088/1674-4926/33/2/023002
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Lin A G, Ding J N, Yuan N Y, Wang S B, Chen G G, Lu C. Analysis of the p+/p window layer of thin film solar cells by simulation[J]. J. Semicond., 2012, 33(2): 023002. doi: 10.1088/1674-4926/33/2/023002.
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Analysis of the p+/p window layer of thin film solar cells by simulation
DOI: 10.1088/1674-4926/33/2/023002
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Abstract
The application of a p+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-1D program. The differences between p+-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed out. The effects of dopant concentration, thickness of p+-layer, contact barrier height and defect density on solar cells are analyzed. Our results indicate that solar cells with a p+-p-i-n configuration have a better performance. The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p+ layer and lowering the front contact barrier height. The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property. -
References
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