AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application

Wang Chong; He Yunlong; Zheng Xuefeng; Hao Yue; Ma Xiaohua; Zhang Jincheng

doi:10.1088/1674-4926/33/3/034003

J. Semicond. > 2012, Volume 33 > Issue 3 > 034003

SEMICONDUCTOR DEVICES

AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application

Wang Chong, He Yunlong, Zheng Xuefeng, Hao Yue, Ma Xiaohua and Zhang Jincheng

+ Author Affiliations

DOI: 10.1088/1674-4926/33/3/034003

Abstract: AlGaN/GaN HEMTs with 0.2 μm V-gate recesses were developed. The 0.2 μm recess lengths were shrunk from the 0.6 μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching. The AlGaN/GaN HEMTs with 0.2 μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_max of 60 GHz. At 10 GHz frequency and 20 V drain bias, the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.

Key words: high electron mobility transistors

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Wang Chong, He Yunlong, Zheng Xuefeng, Hao Yue, Ma Xiaohua, Zhang Jincheng. AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application[J]. Journal of Semiconductors, 2012, 33(3): 034003. doi: 10.1088/1674-4926/33/3/034003

Wang C, He Y L, Zheng X F, Hao Y, Ma X H, Zhang J C. AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application[J]. J. Semicond., 2012, 33(3): 034003. doi: 10.1088/1674-4926/33/3/034003.

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Received: 20 August 2015 Revised: 30 September 2011 Online: Published: 01 March 2012

AlGaN/GaN HEMTs with 0.2 μm V-gate recesses were developed. The 0.2 μm recess lengths were shrunk from the 0.6 μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching. The AlGaN/GaN HEMTs with 0.2 μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_max of 60 GHz. At 10 GHz frequency and 20 V drain bias, the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.

AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application

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