| Citation: |
Wang Chong, He Yunlong, Zheng Xuefeng, Hao Yue, Ma Xiaohua, Zhang Jincheng. AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application[J]. Journal of Semiconductors, 2012, 33(3): 034003. doi: 10.1088/1674-4926/33/3/034003
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Wang C, He Y L, Zheng X F, Hao Y, Ma X H, Zhang J C. AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application[J]. J. Semicond., 2012, 33(3): 034003. doi: 10.1088/1674-4926/33/3/034003.
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AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application
DOI: 10.1088/1674-4926/33/3/034003
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Abstract
AlGaN/GaN HEMTs with 0.2 μm V-gate recesses were developed. The 0.2 μm recess lengths were shrunk from the 0.6 μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching. The AlGaN/GaN HEMTs with 0.2 μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency ft of 35 GHz and a maximum frequency of oscillation fmax of 60 GHz. At 10 GHz frequency and 20 V drain bias, the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.-
Keywords:
- high electron mobility transistors
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References
[1] [2] [3] [4] [5] [6] [7] [8] -
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