A physical surface-potential-based drain current model for polysilicon thin-film transistors

Li Xiyue; Deng Wanling; Huang Junkai

doi:10.1088/1674-4926/33/3/034005

J. Semicond. > 2012, Volume 33 > Issue 3 > 034005

SEMICONDUCTOR DEVICES

A physical surface-potential-based drain current model for polysilicon thin-film transistors

Li Xiyue, Deng Wanling and Huang Junkai

+ Author Affiliations

DOI: 10.1088/1674-4926/33/3/034005

Abstract: A physical drain current model of polysilicon thin-film transistors based on the charge-sheet model, the density of trap states and surface potential is proposed. The model uses non-iterative calculations, which are single-piece and valid in all operation regions above flat-band voltage. The distribution of the trap states, including both Gaussian deep-level states and exponential band-tail states, is also taken into account, and parameter extraction of trap state distribution is developed by the optoelectronic modulation spectroscopy measurement method. Comparisons with the available experimental data are accomplished, and good agreements are obtained.

Key words: polysilicon thin-film transistors, surface potential, drain current model, trap state distribution

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Li Xiyue, Deng Wanling, Huang Junkai. A physical surface-potential-based drain current model for polysilicon thin-film transistors[J]. Journal of Semiconductors, 2012, 33(3): 034005. doi: 10.1088/1674-4926/33/3/034005

Li X Y, Deng W L, Huang J K. A physical surface-potential-based drain current model for polysilicon thin-film transistors[J]. J. Semicond., 2012, 33(3): 034005. doi: 10.1088/1674-4926/33/3/034005.

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Received: 20 August 2015 Revised: 17 November 2011 Online: Published: 01 March 2012

A physical drain current model of polysilicon thin-film transistors based on the charge-sheet model, the density of trap states and surface potential is proposed. The model uses non-iterative calculations, which are single-piece and valid in all operation regions above flat-band voltage. The distribution of the trap states, including both Gaussian deep-level states and exponential band-tail states, is also taken into account, and parameter extraction of trap state distribution is developed by the optoelectronic modulation spectroscopy measurement method. Comparisons with the available experimental data are accomplished, and good agreements are obtained.

A physical surface-potential-based drain current model for polysilicon thin-film transistors

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