| Citation: |
Gao Bo, Yu Xuefeng, Ren Diyuan, Li Yudong, Sun Jing, Cui Jiangwei, Wang Yiyuan, Li Ming. Total dose ionizing irradiation effects on a static random access memory field programmable gate array[J]. Journal of Semiconductors, 2012, 33(3): 034007. doi: 10.1088/1674-4926/33/3/034007
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Gao B, Yu X F, Ren D Y, Li Y D, Sun J, Cui J W, Wang Y Y, Li M. Total dose ionizing irradiation effects on a static random access memory field programmable gate array[J]. J. Semicond., 2012, 33(3): 034007. doi: 10.1088/1674-4926/33/3/034007.
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Total dose ionizing irradiation effects on a static random access memory field programmable gate array
DOI: 10.1088/1674-4926/33/3/034007
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Abstract
SRAM-based FPGA devices are irradiated by 60Coγ rays at various dose rates to investigate total dose effects and the evaluation method. The dependences of typical electrical parameters such as static power current, peak-peak value, and delay time on total dose are discussed. The experiment results show that the static power current of the devices reduces rapidly at room temperature (25 ℃) and high temperature (80 ℃) annealing after irradiation. When the device is irradiated at a low dose rate, the delay time and peak-peak value change unobviously with an increase in the accumulated dose. In contrast, the function parameters completely fail at 2.1 kGy(Si) when the dose rate increases to 0.71 Gy(Si)/s.-
Keywords:
- SRAM-based FPGA
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References
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