| Citation: |
Wu Jiangyan, Yan Jinliang, Yue Wei, Li Ting. Structural and optical properties of Zn3N2 films prepared by magnetron sputtering in NH3-Ar mixture gases[J]. Journal of Semiconductors, 2012, 33(4): 043001. doi: 10.1088/1674-4926/33/4/043001
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Wu J Y, Yan J L, Yue W, Li T. Structural and optical properties of Zn3N2 films prepared by magnetron sputtering in NH3-Ar mixture gases[J]. J. Semicond., 2012, 33(4): 043001. doi: 10.1088/1674-4926/33/4/043001.
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Structural and optical properties of Zn3N2 films prepared by magnetron sputtering in NH3-Ar mixture gases
DOI: 10.1088/1674-4926/33/4/043001
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Abstract
Zinc nitride films were prepared by RF magnetron sputtering a metallic zinc target in NH3-Ar mixture gases on glass substrate at room temperature. The effects of NH3 ratio on the structural and optical properties of the films were examined. X-ray diffraction (XRD) analysis indicates that the films are polycrystalline and have a preferred orientation of (321). An indirect optical band gap increased from 2.33 to 2.70 eV when the NH3 ratio varied from 5% to 25%. The photoluminescence (PL) spectrum shows two emission peaks; the peak located at 437 nm is attributed to the incorporation of oxygen, and the other at 459 nm corresponds to the intrinsic emission. -
References
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