| Citation: |
Zhang Wenmin, Zhang Wei, Fu Jun, Wang Yudong. An analytical model for the drain-source breakdown voltage of RF LDMOS power transistors with a Faraday shield[J]. Journal of Semiconductors, 2012, 33(4): 044001. doi: 10.1088/1674-4926/33/4/044001
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Zhang W M, Zhang W, Fu J, Wang Y D. An analytical model for the drain-source breakdown voltage of RF LDMOS power transistors with a Faraday shield[J]. J. Semicond., 2012, 33(4): 044001. doi: 10.1088/1674-4926/33/4/044001.
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An analytical model for the drain-source breakdown voltage of RF LDMOS power transistors with a Faraday shield
DOI: 10.1088/1674-4926/33/4/044001
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Abstract
An analytical model for the drain-source breakdown voltage of an RF LDMOS power transistor with a Faraday shield is derived on the basis of the solution of the 2D Poisson equation in a p-type epitaxial layer, as well as an n-type drift region by means of parabolic approximation of electrostatic potential. The model captures the influence of the p-type epitaxial layer doping concentration on the breakdown voltage, compared with the previously reported model, as well as the effect of the other device parameters. The analytical model is validated by comparing with a numerical device simulation and the measured characteristics of LDMOS transistors. Based on the model, optimization of LDMOS device parameters to achieve proper trade-off between the breakdown voltage and other characteristic parameters such as on-resistance and feedback capacitance is analyzed. -
References
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