| Citation: |
Huang Huixiang, Liu Zhangli, Hu Zhiyuan, Zhang Zhengxuan, Chen Ming, Bi Dawei, Zou Shichang. Influence of drain and substrate bias on the TID effect for deep submicron technology devices[J]. Journal of Semiconductors, 2012, 33(4): 044008. doi: 10.1088/1674-4926/33/4/044008
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Huang H X, Liu Z L, Hu Z Y, Zhang Z X, Chen M, Bi D W, Zou S C. Influence of drain and substrate bias on the TID effect for deep submicron technology devices[J]. J. Semicond., 2012, 33(4): 044008. doi: 10.1088/1674-4926/33/4/044008.
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Influence of drain and substrate bias on the TID effect for deep submicron technology devices
DOI: 10.1088/1674-4926/33/4/044008
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Abstract
This paper presents a study of the total ionization effects of a 0.18 μm technology. The electrical parameters of NMOSFETs were monitored before and after irradiation with 60Co at several dose levels under different drain and substrate biases. Key parameters such as off-state leakage current and threshold voltage shift were studied to reflect the ionizing radiation tolerance, and explained using a parasitic transistors model. 3D device simulation was conducted to provide a better understanding of the dependence of device characteristics on drain and substrate biases. -
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
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