Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process

Yan Wei; Zhang Renping; Du Yandong; Han Weihua; Yang Fuhua

doi:10.1088/1674-4926/33/6/064005

J. Semicond. > 2012, Volume 33 > Issue 6 > 064005

SEMICONDUCTOR DEVICES

Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process

Yan Wei, Zhang Renping, Du Yandong, Han Weihua and Yang Fuhua

+ Author Affiliations

DOI: 10.1088/1674-4926/33/6/064005

Abstract: The multi-step rapid thermal annealing process of Ti/Al/Ni/Au can make good ohmic contacts with both low contact resistance and smooth surface morphology for AlGaN/GaN HEMTs. In this work, the mechanism of the multi-step annealing process is analyzed in detail by specific experimental methods. The experimental results show that annealing temperature and time are very important parameters when optimizing the Ti/Al layer for lower resistance and the Ni/Au layer for smooth surface morphology. It is very important for good ohmic contacts to balance the rate of various reactions by adjusting the annealing temperature and time. We obtained a minimum specific contact resistance of 3.22 × 10^-7 Ω·cm² on the un-doped AlGaN/GaN structure with an optimized multi-step annealing process.

Key words: AlGaN

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Yan Wei, Zhang Renping, Du Yandong, Han Weihua, Yang Fuhua. Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process[J]. Journal of Semiconductors, 2012, 33(6): 064005. doi: 10.1088/1674-4926/33/6/064005

Yan W, Zhang R P, Du Y D, Han W H, Yang F H. Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process[J]. J. Semicond., 2012, 33(6): 064005. doi: 10.1088/1674-4926/33/6/064005.

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Received: 20 August 2015 Revised: 10 January 2012 Online: Published: 01 June 2012

The multi-step rapid thermal annealing process of Ti/Al/Ni/Au can make good ohmic contacts with both low contact resistance and smooth surface morphology for AlGaN/GaN HEMTs. In this work, the mechanism of the multi-step annealing process is analyzed in detail by specific experimental methods. The experimental results show that annealing temperature and time are very important parameters when optimizing the Ti/Al layer for lower resistance and the Ni/Au layer for smooth surface morphology. It is very important for good ohmic contacts to balance the rate of various reactions by adjusting the annealing temperature and time. We obtained a minimum specific contact resistance of 3.22 × 10^-7 Ω·cm² on the un-doped AlGaN/GaN structure with an optimized multi-step annealing process.

Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process

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Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process

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Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process

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