A novel antifuse structure based on amorphous bismuth zinc niobate thin films

Wang Gang; Li Wei; Li Ping; Li Zuxiong; Fan Xue; Jiang Jing

doi:10.1088/1674-4926/33/8/084002

J. Semicond. > 2012, Volume 33 > Issue 8 > 084002

SEMICONDUCTOR DEVICES

A novel antifuse structure based on amorphous bismuth zinc niobate thin films

Wang Gang, Li Wei, Li Ping, Li Zuxiong, Fan Xue and Jiang Jing

+ Author Affiliations

DOI: 10.1088/1674-4926/33/8/084002

Abstract: A novel antifuse structure with amorphous bismuth zinc niobate (a-BZN) dielectrics was proposed. The characteristics of the a-BZN antifuse were investigated. Programming direction of up to down was chosen to rupture the a-BZN antifuse. The breakdown voltage of the a-BZN antifuse was obtained at a magnitude of 6.56 V. A large off-state resistance of more than 1 GΩ for the a-BZN antifuse was demonstrated. The surface micrograph of the ruptured a-BZN antifuses was illustrated. Programming characteristics with the programming time of 0.46 ms and on-state properties with the average resistance value of 26.1 Ω of the a-BZN antifuse were exhibited. The difference of characteristics of the a-BZN antifuse from that of a cubic pyrochlore bismuth zinc niobate (cp-BZN) antifuse and gate oxide antifuse was compared and analyzed.

Key words: amorphous bismuth zinc niobate, thin film, antifuse, comparison

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Wang Gang, Li Wei, Li Ping, Li Zuxiong, Fan Xue, Jiang Jing. A novel antifuse structure based on amorphous bismuth zinc niobate thin films[J]. Journal of Semiconductors, 2012, 33(8): 084002. doi: 10.1088/1674-4926/33/8/084002

Wang G, Li W, Li P, Li Z X, Fan X, Jiang J. A novel antifuse structure based on amorphous bismuth zinc niobate thin films[J]. J. Semicond., 2012, 33(8): 084002. doi: 10.1088/1674-4926/33/8/084002.

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Received: 20 August 2015 Revised: 11 April 2012 Online: Published: 01 August 2012

A novel antifuse structure with amorphous bismuth zinc niobate (a-BZN) dielectrics was proposed. The characteristics of the a-BZN antifuse were investigated. Programming direction of up to down was chosen to rupture the a-BZN antifuse. The breakdown voltage of the a-BZN antifuse was obtained at a magnitude of 6.56 V. A large off-state resistance of more than 1 GΩ for the a-BZN antifuse was demonstrated. The surface micrograph of the ruptured a-BZN antifuses was illustrated. Programming characteristics with the programming time of 0.46 ms and on-state properties with the average resistance value of 26.1 Ω of the a-BZN antifuse were exhibited. The difference of characteristics of the a-BZN antifuse from that of a cubic pyrochlore bismuth zinc niobate (cp-BZN) antifuse and gate oxide antifuse was compared and analyzed.

A novel antifuse structure based on amorphous bismuth zinc niobate thin films

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A novel antifuse structure based on amorphous bismuth zinc niobate thin films

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